Abstract
n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects from the AlN potential barrier layer.
| Original language | English |
|---|---|
| Pages (from-to) | 6085-6088 |
| Number of pages | 4 |
| Journal | CrystEngComm |
| Volume | 19 |
| Issue number | 41 |
| DOIs | |
| State | Published - 2017 |
| Externally published | Yes |
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