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ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects from the AlN potential barrier layer.

Original languageEnglish
Pages (from-to)6085-6088
Number of pages4
JournalCrystEngComm
Volume19
Issue number41
DOIs
StatePublished - 2017
Externally publishedYes

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