Z-axis Capacitive Accelerometer with novel beams using SOG Structure

Weiping Chen; Xiaowei Liu; Mingxue Huo; Yumin Lin; Hongshi Li

doi:10.1109/NEMS.2006.334841

Z-axis Capacitive Accelerometer with novel beams using SOG Structure

Weiping Chen^*
, Xiaowei Liu
, Mingxue Huo
, Yumin Lin
, Hongshi Li

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A differential capacitive silicon z-axis micro-accelerometer with special tethers, based on anisotropy etching, anodic bonding and DRIE (Deep Reactive Ion Etching) technology is proposed and a novel inertia structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated by one set of masks. The simulation of the static and modal performances and the optimized design of the accelerometer are accomplished with the FEM (finite element method). The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure is used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation as IntelliSuite. The damping coefficient formula is used to optimize the system dynamic characteristics by adjusting system-damping ratio to 0.678 through changing the parameters of the proof mass. The mechanical sensitivity of the accelerometer varies from 0.12pF/g to 8.7×10^-3pF/g as the thickness of the beam from 20μm to 50μm. This is a very important result in terms of making variable accelerometers adopted for variable sensitivity and measure range using one set of masks.

Original language	English
Title of host publication	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Pages	1532-1535
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2006.334841
State	Published - 2006
Event	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS - Zhuhai, China Duration: 18 Jan 2006 → 21 Jan 2006

Publication series

Name	Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Conference

Conference	1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS
Country/Territory	China
City	Zhuhai
Period	18/01/06 → 21/01/06

Keywords

Accelerometer
DRIE
Damping ratio

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10.1109/NEMS.2006.334841

Cite this

Chen, W., Liu, X., Huo, M., Lin, Y., & Li, H. (2006). Z-axis Capacitive Accelerometer with novel beams using SOG Structure. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS (pp. 1532-1535). Article 4135235 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). https://doi.org/10.1109/NEMS.2006.334841

@inproceedings{5a6a8737b5084df1be3c15627ee8bdfb,

title = "Z-axis Capacitive Accelerometer with novel beams using SOG Structure",

abstract = "A differential capacitive silicon z-axis micro-accelerometer with special tethers, based on anisotropy etching, anodic bonding and DRIE (Deep Reactive Ion Etching) technology is proposed and a novel inertia structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated by one set of masks. The simulation of the static and modal performances and the optimized design of the accelerometer are accomplished with the FEM (finite element method). The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure is used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation as IntelliSuite. The damping coefficient formula is used to optimize the system dynamic characteristics by adjusting system-damping ratio to 0.678 through changing the parameters of the proof mass. The mechanical sensitivity of the accelerometer varies from 0.12pF/g to 8.7×10-3pF/g as the thickness of the beam from 20μm to 50μm. This is a very important result in terms of making variable accelerometers adopted for variable sensitivity and measure range using one set of masks.",

keywords = "Accelerometer, DRIE, Damping ratio",

author = "Weiping Chen and Xiaowei Liu and Mingxue Huo and Yumin Lin and Hongshi Li",

year = "2006",

doi = "10.1109/NEMS.2006.334841",

language = "英语",

isbn = "1424401402",

series = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",

pages = "1532--1535",

booktitle = "Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS",

note = "1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS ; Conference date: 18-01-2006 Through 21-01-2006",

}

Chen, W, Liu, X, Huo, M, Lin, Y & Li, H 2006, Z-axis Capacitive Accelerometer with novel beams using SOG Structure. in Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS., 4135235, Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, pp. 1532-1535, 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS, Zhuhai, China, 18/01/06. https://doi.org/10.1109/NEMS.2006.334841

Z-axis Capacitive Accelerometer with novel beams using SOG Structure. / Chen, Weiping; Liu, Xiaowei; Huo, Mingxue et al.
Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. 2006. p. 1532-1535 4135235 (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Z-axis Capacitive Accelerometer with novel beams using SOG Structure

AU - Chen, Weiping

AU - Liu, Xiaowei

AU - Huo, Mingxue

AU - Lin, Yumin

AU - Li, Hongshi

PY - 2006

Y1 - 2006

N2 - A differential capacitive silicon z-axis micro-accelerometer with special tethers, based on anisotropy etching, anodic bonding and DRIE (Deep Reactive Ion Etching) technology is proposed and a novel inertia structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated by one set of masks. The simulation of the static and modal performances and the optimized design of the accelerometer are accomplished with the FEM (finite element method). The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure is used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation as IntelliSuite. The damping coefficient formula is used to optimize the system dynamic characteristics by adjusting system-damping ratio to 0.678 through changing the parameters of the proof mass. The mechanical sensitivity of the accelerometer varies from 0.12pF/g to 8.7×10-3pF/g as the thickness of the beam from 20μm to 50μm. This is a very important result in terms of making variable accelerometers adopted for variable sensitivity and measure range using one set of masks.

AB - A differential capacitive silicon z-axis micro-accelerometer with special tethers, based on anisotropy etching, anodic bonding and DRIE (Deep Reactive Ion Etching) technology is proposed and a novel inertia structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated by one set of masks. The simulation of the static and modal performances and the optimized design of the accelerometer are accomplished with the FEM (finite element method). The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure is used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation as IntelliSuite. The damping coefficient formula is used to optimize the system dynamic characteristics by adjusting system-damping ratio to 0.678 through changing the parameters of the proof mass. The mechanical sensitivity of the accelerometer varies from 0.12pF/g to 8.7×10-3pF/g as the thickness of the beam from 20μm to 50μm. This is a very important result in terms of making variable accelerometers adopted for variable sensitivity and measure range using one set of masks.

KW - Accelerometer

KW - DRIE

KW - Damping ratio

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M3 - 会议稿件

AN - SCOPUS:46149089408

SN - 1424401402

SN - 9781424401406

T3 - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

SP - 1532

EP - 1535

BT - Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

T2 - 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS

Y2 - 18 January 2006 through 21 January 2006

ER -

Chen W, Liu X, Huo M, Lin Y, Li H. Z-axis Capacitive Accelerometer with novel beams using SOG Structure. In Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS. 2006. p. 1532-1535. 4135235. (Proceedings of 1st IEEE International Conference on Nano Micro Engineered and Molecular Systems, 1st IEEE-NEMS). doi: 10.1109/NEMS.2006.334841

Z-axis Capacitive Accelerometer with novel beams using SOG Structure

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Keywords

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