Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors

G. I. Churyumov; M. P. Gribskii; V. V. Starostenko; V. Yr Tereshenko; D. A. Unzhakov; S. A. Zuev

doi:10.1007/978-0-387-77845-7_43

Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors

G. I. Churyumov^*
, M. P. Gribskii
, V. V. Starostenko
, V. Yr Tereshenko
, D. A. Unzhakov
, S. A. Zuev

^*Corresponding author for this work

Kharkiv National University of Radio Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this chapter a numerical mathematical model of the Si and GaAs Schottky-barrier field-effect transistor is considered. This model permits current and thermal modes of these devices to be investigated when reaction of powerful electromagnetic pulses takes place. In this case changing characteristics of semiconducting materials with increasing temperature is taken into account. Using the mathematical model allows dynamics of electrothermal processes to be studied including an outgrowth of avalanche process, forming current "cord," thermal breakdown of the devices. The computer modeling results showed that in studies of the external reaction of the electromagnetic pulses with semiconductor devices as criterion of the resistance it is necessary to take into account the volume density of power instead of its surface density.

Original language	English
Title of host publication	Ultra-Wideband, Short Pulse Electromagnetics 9
Publisher	Springer Science and Business Media, LLC
Pages	369-374
Number of pages	6
ISBN (Print)	9780387778440
DOIs	https://doi.org/10.1007/978-0-387-77845-7_43
State	Published - 2010
Externally published	Yes
Event	9th Conference on Ultra-Wideband, Short Pulse Electromagnetics, UWBSP 2008 - Lausanne, Switzerland Duration: 21 Jul 2008 → 25 Jul 2008

Publication series

Name	Ultra-Wideband, Short Pulse Electromagnetics 9

Conference

Conference	9th Conference on Ultra-Wideband, Short Pulse Electromagnetics, UWBSP 2008
Country/Territory	Switzerland
City	Lausanne
Period	21/07/08 → 25/07/08

Keywords

Computer modeling
Electromagnetic pulse
Mathematical model
Semiconductor device
Wunsch-Bell criterial

Access to Document

10.1007/978-0-387-77845-7_43

Cite this

Churyumov, G. I., Gribskii, M. P., Starostenko, V. V., Tereshenko, V. Y., Unzhakov, D. A., & Zuev, S. A. (2010). Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors. In Ultra-Wideband, Short Pulse Electromagnetics 9 (pp. 369-374). (Ultra-Wideband, Short Pulse Electromagnetics 9). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-0-387-77845-7_43

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title = "Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors",

abstract = "In this chapter a numerical mathematical model of the Si and GaAs Schottky-barrier field-effect transistor is considered. This model permits current and thermal modes of these devices to be investigated when reaction of powerful electromagnetic pulses takes place. In this case changing characteristics of semiconducting materials with increasing temperature is taken into account. Using the mathematical model allows dynamics of electrothermal processes to be studied including an outgrowth of avalanche process, forming current {"}cord,{"} thermal breakdown of the devices. The computer modeling results showed that in studies of the external reaction of the electromagnetic pulses with semiconductor devices as criterion of the resistance it is necessary to take into account the volume density of power instead of its surface density.",

keywords = "Computer modeling, Electromagnetic pulse, Mathematical model, Semiconductor device, Wunsch-Bell criterial",

author = "Churyumov, \{G. I.\} and Gribskii, \{M. P.\} and Starostenko, \{V. V.\} and Tereshenko, \{V. Yr\} and Unzhakov, \{D. A.\} and Zuev, \{S. A.\}",

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doi = "10.1007/978-0-387-77845-7\_43",

language = "英语",

isbn = "9780387778440",

series = "Ultra-Wideband, Short Pulse Electromagnetics 9",

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booktitle = "Ultra-Wideband, Short Pulse Electromagnetics 9",

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note = "9th Conference on Ultra-Wideband, Short Pulse Electromagnetics, UWBSP 2008 ; Conference date: 21-07-2008 Through 25-07-2008",

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Churyumov, GI, Gribskii, MP, Starostenko, VV, Tereshenko, VY, Unzhakov, DA & Zuev, SA 2010, Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors. in Ultra-Wideband, Short Pulse Electromagnetics 9. Ultra-Wideband, Short Pulse Electromagnetics 9, Springer Science and Business Media, LLC, pp. 369-374, 9th Conference on Ultra-Wideband, Short Pulse Electromagnetics, UWBSP 2008, Lausanne, Switzerland, 21/07/08. https://doi.org/10.1007/978-0-387-77845-7_43

Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors. / Churyumov, G. I.; Gribskii, M. P.; Starostenko, V. V. et al.
Ultra-Wideband, Short Pulse Electromagnetics 9. Springer Science and Business Media, LLC, 2010. p. 369-374 (Ultra-Wideband, Short Pulse Electromagnetics 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors

AU - Churyumov, G. I.

AU - Gribskii, M. P.

AU - Starostenko, V. V.

AU - Tereshenko, V. Yr

AU - Unzhakov, D. A.

AU - Zuev, S. A.

PY - 2010

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N2 - In this chapter a numerical mathematical model of the Si and GaAs Schottky-barrier field-effect transistor is considered. This model permits current and thermal modes of these devices to be investigated when reaction of powerful electromagnetic pulses takes place. In this case changing characteristics of semiconducting materials with increasing temperature is taken into account. Using the mathematical model allows dynamics of electrothermal processes to be studied including an outgrowth of avalanche process, forming current "cord," thermal breakdown of the devices. The computer modeling results showed that in studies of the external reaction of the electromagnetic pulses with semiconductor devices as criterion of the resistance it is necessary to take into account the volume density of power instead of its surface density.

AB - In this chapter a numerical mathematical model of the Si and GaAs Schottky-barrier field-effect transistor is considered. This model permits current and thermal modes of these devices to be investigated when reaction of powerful electromagnetic pulses takes place. In this case changing characteristics of semiconducting materials with increasing temperature is taken into account. Using the mathematical model allows dynamics of electrothermal processes to be studied including an outgrowth of avalanche process, forming current "cord," thermal breakdown of the devices. The computer modeling results showed that in studies of the external reaction of the electromagnetic pulses with semiconductor devices as criterion of the resistance it is necessary to take into account the volume density of power instead of its surface density.

KW - Computer modeling

KW - Electromagnetic pulse

KW - Mathematical model

KW - Semiconductor device

KW - Wunsch-Bell criterial

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PB - Springer Science and Business Media, LLC

T2 - 9th Conference on Ultra-Wideband, Short Pulse Electromagnetics, UWBSP 2008

Y2 - 21 July 2008 through 25 July 2008

ER -

Wunsch-bell criterial dependence for Si and GaAs schottky-barrier field-effect transistors

Abstract

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Keywords

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