WSe2/Si 异质结侧向光伏器件（特邀）

Miaoran Kang; Lingli Zhang; Shuo Gong; Yining Tai; Xianjie Wang

doi:10.3788/LOP250986

WSe₂/Si 异质结侧向光伏器件（特邀）

Translated title of the contribution: Lateral Photovoltaic Devices of WSe₂/Si Heterojunctions (Invited)

Miaoran Kang
, Lingli Zhang
, Shuo Gong
, Yining Tai
, Xianjie Wang^*

^*Corresponding author for this work

School of Physics, Harbin Institute of Technology
Heilongjiang Provincial Key Laboratory of Advanced Quantum Functional Materials and Sensor Devices

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports the lateral photovoltaic effect and applications of WSe₂/Si heterojunctions. High-quality WSe₂ films were grown on p-type and n-type Si substrates using pulsed laser deposition. The quality of the prepared WSe₂ films was verified through X-ray diffraction patterns, X-ray photoelectron spectroscopy, and Raman spectroscopy. The vertical I-V characteristics of the heterojunctions exhibited distinct unidirectional conductivity and high open-circuit voltage. When a point light source moved across the WSe₂ surface, the voltage difference between the two electrodes showed a linear relationship with the light spot position. The lateral photovoltaic relaxation times for WSe₂/p-Si and WSe₂/n-Si heterojunctions at 393 K were 1.1 μs and 1.92 μs, respectively, suggesting new possibilities for developing high-temperature stable sensors. Additionally, we investigated the image sensing capabilities of these heterojunctions under lowlight conditions.

Translated title of the contribution	Lateral Photovoltaic Devices of WSe₂/Si Heterojunctions (Invited)
Original language	Chinese (Traditional)
Article number	1504001
Journal	Laser and Optoelectronics Progress
Volume	62
Issue number	15
DOIs	https://doi.org/10.3788/LOP250986
State	Published - Aug 2025
Externally published	Yes

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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@article{162ea24bc3fc4b8781b8eb3eca2904da,

title = "WSe2/Si 异质结侧向光伏器件（特邀）",

abstract = "This paper reports the lateral photovoltaic effect and applications of WSe2/Si heterojunctions. High-quality WSe2 films were grown on p-type and n-type Si substrates using pulsed laser deposition. The quality of the prepared WSe2 films was verified through X-ray diffraction patterns, X-ray photoelectron spectroscopy, and Raman spectroscopy. The vertical I-V characteristics of the heterojunctions exhibited distinct unidirectional conductivity and high open-circuit voltage. When a point light source moved across the WSe2 surface, the voltage difference between the two electrodes showed a linear relationship with the light spot position. The lateral photovoltaic relaxation times for WSe2/p-Si and WSe2/n-Si heterojunctions at 393 K were 1.1 μs and 1.92 μs, respectively, suggesting new possibilities for developing high-temperature stable sensors. Additionally, we investigated the image sensing capabilities of these heterojunctions under lowlight conditions.",

keywords = "heterojunction, photoelectric detector, photovoltaic effect, transition metal sulfide",

author = "Miaoran Kang and Lingli Zhang and Shuo Gong and Yining Tai and Xianjie Wang",

year = "2025",

month = aug,

doi = "10.3788/LOP250986",

language = "繁体中文",

volume = "62",

journal = "Laser and Optoelectronics Progress",

issn = "1006-4125",

publisher = "Chinese Laser Press",

number = "15",

}

TY - JOUR

T1 - WSe2/Si 异质结侧向光伏器件（特邀）

AU - Kang, Miaoran

AU - Zhang, Lingli

AU - Gong, Shuo

AU - Tai, Yining

AU - Wang, Xianjie

PY - 2025/8

Y1 - 2025/8

N2 - This paper reports the lateral photovoltaic effect and applications of WSe2/Si heterojunctions. High-quality WSe2 films were grown on p-type and n-type Si substrates using pulsed laser deposition. The quality of the prepared WSe2 films was verified through X-ray diffraction patterns, X-ray photoelectron spectroscopy, and Raman spectroscopy. The vertical I-V characteristics of the heterojunctions exhibited distinct unidirectional conductivity and high open-circuit voltage. When a point light source moved across the WSe2 surface, the voltage difference between the two electrodes showed a linear relationship with the light spot position. The lateral photovoltaic relaxation times for WSe2/p-Si and WSe2/n-Si heterojunctions at 393 K were 1.1 μs and 1.92 μs, respectively, suggesting new possibilities for developing high-temperature stable sensors. Additionally, we investigated the image sensing capabilities of these heterojunctions under lowlight conditions.

AB - This paper reports the lateral photovoltaic effect and applications of WSe2/Si heterojunctions. High-quality WSe2 films were grown on p-type and n-type Si substrates using pulsed laser deposition. The quality of the prepared WSe2 films was verified through X-ray diffraction patterns, X-ray photoelectron spectroscopy, and Raman spectroscopy. The vertical I-V characteristics of the heterojunctions exhibited distinct unidirectional conductivity and high open-circuit voltage. When a point light source moved across the WSe2 surface, the voltage difference between the two electrodes showed a linear relationship with the light spot position. The lateral photovoltaic relaxation times for WSe2/p-Si and WSe2/n-Si heterojunctions at 393 K were 1.1 μs and 1.92 μs, respectively, suggesting new possibilities for developing high-temperature stable sensors. Additionally, we investigated the image sensing capabilities of these heterojunctions under lowlight conditions.

KW - heterojunction

KW - photoelectric detector

KW - photovoltaic effect

KW - transition metal sulfide

UR - https://www.scopus.com/pages/publications/105013062002

U2 - 10.3788/LOP250986

DO - 10.3788/LOP250986

M3 - 文章

AN - SCOPUS:105013062002

SN - 1006-4125

VL - 62

JO - Laser and Optoelectronics Progress

JF - Laser and Optoelectronics Progress

IS - 15

M1 - 1504001

ER -

WSe₂/Si 异质结侧向光伏器件（特邀）

Abstract

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