Abstract
Global water stress and challenges for producing sufficient supplies of fit-for-purpose water are amplifying. Atomically engineered interfaces are emerging as a powerful tool in the fabrication of advanced water treatment materials. Atomic layer deposition (ALD) and recently developed related methods, such as sequential infiltration synthesis (SIS), offer a tremendously diverse library of chemistries for interface functionalization. Thickness, stoichiometry, and physicochemical properties can be manipulated with precision. We review their fundamental physical chemistry and processing factors. ALD/SIS engineering strategies, including direct deposition, growth with intermediate layers, and secondary treatment are presented with realization of efficient water treatment. We lay out a pathway to establishing an ALD/SIS-based universal functionalization platform for water treatment, including sensitization strategies, in situ regulation, secondary reactions, and simulation/machine learning. We also provide a perspective on ALD/SIS-based interface engineering via synergy with other widely used interface engineering techniques to develop facile, versatile, and energy-efficient strategies for tackling increasingly complex water challenges.
| Original language | English |
|---|---|
| Pages (from-to) | 3515-3548 |
| Number of pages | 34 |
| Journal | Matter |
| Volume | 4 |
| Issue number | 11 |
| DOIs | |
| State | Published - 3 Nov 2021 |
| Externally published | Yes |
Keywords
- atomic layer deposition
- membrane
- sequential infiltration synthesis
- sorbent
- water treatment
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