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W-band wideband high-gain circularly polarized π-shaped antenna array with stacked parasitic patches

  • Kuan Zhang
  • , Yao Li
  • , Quan Yuan
  • , Guanghua Sun
  • , Yanjie Wang*
  • *Corresponding author for this work
  • South China University of Technology
  • Southeast University, Nanjing
  • Harbin Institute of Technology Shenzhen

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a W-band circularly polarized (CP) antenna featuring aperture-coupled rotating π-shaped patches and stacked parasitic patches. The design employs a pair of symmetrical π-shaped patches, whose optimized rotation angle enables the realization of high-quality circular polarization. Compared to conventional dipole or rectangular patch structures, the π-shaped configuration provides an enhanced axial ratio (AR) bandwidth. The radiating patches are embedded within a cavity formed by substrate-integrated waveguides (SIW), with energy coupling achieved through a precisely designed slot on the SIW ground plane. To further enhance the radiation performance, a pair of stacked rectangular parasitic patches are introduced above the radiating structure. Simulation results demonstrate that the proposed antenna element achieves an 11.7 % (86–97 GHz) AR bandwidth and a peak gain of 9.7 dBic. As proof of concept, a 2 × 2 elements prototype was designed and fabricated using single-layer PCB technology. Measurements demonstrate that this array exhibits an impedance bandwidth of 11.4 % (88–98.5 GHz), an AR bandwidth of 11.3 % from 87.2 to 97.6 GHz, a gain variation between 13.8 and 15.2 dBic, and the maximum aperture efficiency reaches 74.5 %.

Original languageEnglish
Article number106729
JournalMicroelectronics Journal
Volume161
DOIs
StatePublished - Jul 2025
Externally publishedYes

Keywords

  • Aperture-coupled rotating π-shaped patches
  • Circularly polarized (CP)
  • Stacked parasitic patch
  • W-band

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