Void density reduction at the Cu-Cu bonding interface by means of prebonding surface passivation with self-assembled monolayer

D. F. Lim; X. F. Ang; J. Wei; C. M. Ng; C. S. Tan

doi:10.1149/1.3487926

Void density reduction at the Cu-Cu bonding interface by means of prebonding surface passivation with self-assembled monolayer

D. F. Lim
, X. F. Ang
, J. Wei
, C. M. Ng
, C. S. Tan

Nanyang Technological University
Agency for Science, Technology and Research, Singapore
Global Foundries, Inc.

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A self-assembled monolayer (SAM) of 1-hexanethiol is formed on a copper (Cu) thin layer coated on silicon (Si) wafers with the aim to protect the surface against contamination during storage in room ambient. After 3 days of storage, the SAM is desorbed with an in situ annealing step in inert N ₂ ambient to provide a clean Cu surface and a pair of wafers is bonded at 250°C. It is observed with scanning acoustic microscopy that there is a clear reduction in the interfacial void density in the bonded pair compared with the control sample without SAM passivation.

Original language	English
Pages (from-to)	H412-H415
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1149/1.3487926
State	Published - 2010
Externally published	Yes

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title = "Void density reduction at the Cu-Cu bonding interface by means of prebonding surface passivation with self-assembled monolayer",

abstract = "A self-assembled monolayer (SAM) of 1-hexanethiol is formed on a copper (Cu) thin layer coated on silicon (Si) wafers with the aim to protect the surface against contamination during storage in room ambient. After 3 days of storage, the SAM is desorbed with an in situ annealing step in inert N 2 ambient to provide a clean Cu surface and a pair of wafers is bonded at 250°C. It is observed with scanning acoustic microscopy that there is a clear reduction in the interfacial void density in the bonded pair compared with the control sample without SAM passivation.",

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AU - Lim, D. F.

AU - Ang, X. F.

AU - Wei, J.

AU - Ng, C. M.

AU - Tan, C. S.

PY - 2010

Y1 - 2010

N2 - A self-assembled monolayer (SAM) of 1-hexanethiol is formed on a copper (Cu) thin layer coated on silicon (Si) wafers with the aim to protect the surface against contamination during storage in room ambient. After 3 days of storage, the SAM is desorbed with an in situ annealing step in inert N 2 ambient to provide a clean Cu surface and a pair of wafers is bonded at 250°C. It is observed with scanning acoustic microscopy that there is a clear reduction in the interfacial void density in the bonded pair compared with the control sample without SAM passivation.

AB - A self-assembled monolayer (SAM) of 1-hexanethiol is formed on a copper (Cu) thin layer coated on silicon (Si) wafers with the aim to protect the surface against contamination during storage in room ambient. After 3 days of storage, the SAM is desorbed with an in situ annealing step in inert N 2 ambient to provide a clean Cu surface and a pair of wafers is bonded at 250°C. It is observed with scanning acoustic microscopy that there is a clear reduction in the interfacial void density in the bonded pair compared with the control sample without SAM passivation.

UR - https://www.scopus.com/pages/publications/77958493117

U2 - 10.1149/1.3487926

DO - 10.1149/1.3487926

M3 - 文章

AN - SCOPUS:77958493117

SN - 1099-0062

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SP - H412-H415

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Void density reduction at the Cu-Cu bonding interface by means of prebonding surface passivation with self-assembled monolayer

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