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Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

  • Wei Zhou
  • , Xiao Jia Chen
  • , Jian Bo Zhang
  • , Xin Hua Li
  • , Yu Qi Wang
  • , Alexander F. Goncharov*
  • *Corresponding author for this work
  • CAS - Institute of Solid State Physics
  • Center for High Pressure Science & Technology Advanced Research
  • South China University of Technology
  • Carnegie Institution of Washington

Research output: Contribution to journalArticlepeer-review

Abstract

The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E 0 and the crystal field split-off gap E 0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21c GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments.

Original languageEnglish
Article number6472
JournalScientific Reports
Volume4
DOIs
StatePublished - 25 Sep 2014
Externally publishedYes

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