Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Hsu Sheng Tsai; Jhe Wei Liou; Yi Chung Wang; Chia Wei Chen; Yu Lun Chueh; Ching Hung Hsiao; Hao Ouyang; Wei Yen Woon; Jenq Horng Liang

doi:10.1039/c6ra28273c

Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

Hsu Sheng Tsai^*
, Jhe Wei Liou
, Yi Chung Wang
, Chia Wei Chen
, Yu Lun Chueh
, Ching Hung Hsiao
, Hao Ouyang
, Wei Yen Woon
, Jenq Horng Liang

^*Corresponding author for this work

National Tsing Hua University
National Central University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The vertical Al₂Se₃/MoSe₂ heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe₂ was formed via Mo selenization, while Al₂Se₃ was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

Original language	English
Pages (from-to)	10154-10157
Number of pages	4
Journal	RSC Advances
Volume	7
Issue number	17
DOIs	https://doi.org/10.1039/c6ra28273c
State	Published - 2017
Externally published	Yes

Access to Document

10.1039/c6ra28273c

Cite this

@article{d0e47c7d1c34408cad568fa13825b73a,

title = "Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam",

abstract = "The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.",

author = "Tsai, \{Hsu Sheng\} and Liou, \{Jhe Wei\} and Wang, \{Yi Chung\} and Chen, \{Chia Wei\} and Chueh, \{Yu Lun\} and Hsiao, \{Ching Hung\} and Hao Ouyang and Woon, \{Wei Yen\} and Liang, \{Jenq Horng\}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2017",

doi = "10.1039/c6ra28273c",

language = "英语",

volume = "7",

pages = "10154--10157",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "17",

}

TY - JOUR

T1 - Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

AU - Tsai, Hsu Sheng

AU - Liou, Jhe Wei

AU - Wang, Yi Chung

AU - Chen, Chia Wei

AU - Chueh, Yu Lun

AU - Hsiao, Ching Hung

AU - Ouyang, Hao

AU - Woon, Wei Yen

AU - Liang, Jenq Horng

PY - 2017

Y1 - 2017

N2 - The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

AB - The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

UR - https://www.scopus.com/pages/publications/85011973293

U2 - 10.1039/c6ra28273c

DO - 10.1039/c6ra28273c

M3 - 文章

AN - SCOPUS:85011973293

SN - 2046-2069

VL - 7

SP - 10154

EP - 10157

JO - RSC Advances

JF - RSC Advances

IS - 17

ER -

Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

Abstract

Access to Document

Other files and links

Fingerprint

Cite this