Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

Xinshun Wang; Yang Liu; Panjuan Zhao; Zhongyi Guo; Yan Li; Shiliang Qu

doi:10.1063/1.4918550

Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

Xinshun Wang^*
, Yang Liu
, Panjuan Zhao
, Zhongyi Guo
, Yan Li
, Shiliang Qu

^*Corresponding author for this work

School of Science, Harbin Institute of Technology Weihai

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The broad band upconversion luminescence in Yb³⁺:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463-nm could be assigned to the 5d → 4f transitions of Yb²⁺ ions and the one at 692-nm could be attributed to the electron-hole recombination process on (Yb²⁺-F⁺) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb³⁺ to Yb²⁺ and (Yb²⁺-F⁺) centers have been induced by infrared femtosecond laser irradiation in Yb³⁺:YAG crystal.

Original language	English
Article number	153104
Journal	Journal of Applied Physics
Volume	117
Issue number	15
DOIs	https://doi.org/10.1063/1.4918550
State	Published - 21 Apr 2015
Externally published	Yes

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title = "Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals",

abstract = "The broad band upconversion luminescence in Yb3+:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463-nm could be assigned to the 5d → 4f transitions of Yb2+ ions and the one at 692-nm could be attributed to the electron-hole recombination process on (Yb2+-F+) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb3+ to Yb2+ and (Yb2+-F+) centers have been induced by infrared femtosecond laser irradiation in Yb3+:YAG crystal.",

author = "Xinshun Wang and Yang Liu and Panjuan Zhao and Zhongyi Guo and Yan Li and Shiliang Qu",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = apr,

day = "21",

doi = "10.1063/1.4918550",

language = "英语",

volume = "117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

AU - Wang, Xinshun

AU - Liu, Yang

AU - Zhao, Panjuan

AU - Guo, Zhongyi

AU - Li, Yan

AU - Qu, Shiliang

PY - 2015/4/21

Y1 - 2015/4/21

N2 - The broad band upconversion luminescence in Yb3+:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463-nm could be assigned to the 5d → 4f transitions of Yb2+ ions and the one at 692-nm could be attributed to the electron-hole recombination process on (Yb2+-F+) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb3+ to Yb2+ and (Yb2+-F+) centers have been induced by infrared femtosecond laser irradiation in Yb3+:YAG crystal.

AB - The broad band upconversion luminescence in Yb3+:YAG crystal has been observed in experiments under the irradiation of focused infrared femtosecond laser. The dependence of the fluorescence intensity on the pump power shows that the upconversion luminescence is due to simultaneous two-photon absorption process, which indicates that the broad emission bands at 365 and 463-nm could be assigned to the 5d → 4f transitions of Yb2+ ions and the one at 692-nm could be attributed to the electron-hole recombination process on (Yb2+-F+) centers. The absorption spectra of the Yb:YAG crystal samples before and after femtosecond laser irradiation, and after further annealing reveal that permanent valence state change of Yb ions from Yb3+ to Yb2+ and (Yb2+-F+) centers have been induced by infrared femtosecond laser irradiation in Yb3+:YAG crystal.

UR - https://www.scopus.com/pages/publications/84928348825

U2 - 10.1063/1.4918550

DO - 10.1063/1.4918550

M3 - 文章

AN - SCOPUS:84928348825

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 15

M1 - 153104

ER -

Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals

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