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Valence electronic structure and cohesive property of a binary noble metal nitride

  • Changzeng Fan*
  • , Liling Sun
  • , Jun Zhang
  • , Yuanzhi Jia
  • , Lianyong Zhang
  • , Zunjie Wei
  • , Mingzhen Ma
  • , Riping Liu
  • , Songyan Zeng
  • , Wenkui Wang
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • CAS - Institute of Physics
  • Yanshan University

Research output: Contribution to journalArticlepeer-review

Abstract

The valence electronic structure of a newly synthesized binary noble metal nitride PtN is obtained by utilizing an empirical electronic theory. The results reveal that the valence electron configuration of the nitride is: Pt 6s 0.143, 6p 1.286, 5d 3.0; N 2s 0.5694, 2p 2.4306. Such a configuration is different from that used to generate pseudopotential for the first principle calculations, and may explain why the calculated and experimental values of the bulk modulus of PtN cannot coincide. In addition, we also calculate the cohesive energy of this new phase based on the valence electronic structure, which is -674.75 kJ/mol.

Original languageEnglish
Pages (from-to)1079-1082
Number of pages4
JournalChinese Science Bulletin
Volume50
Issue number11
DOIs
StatePublished - 2005

Keywords

  • Cohesive energy
  • PtN
  • Valence electronic structure

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