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Vacancy-Defect Topological Insulators Bi2Te3−x Embedded in N and B Co-Doped 1D Carbon Nanorods Using Ionic Liquid Dopants for Kinetics-Enhanced Li–S Batteries

  • Shunyou Hu
  • , Xueyan Huang
  • , Ling Zhang
  • , Guanglei Li
  • , Shengmin Chen
  • , Jiaheng Zhang*
  • , Xiangli Liu*
  • *Corresponding author for this work
  • Harbin Institute of Technology Shenzhen
  • Tsinghua University

Research output: Contribution to journalArticlepeer-review

Abstract

Lithium–sulfur (Li–S) batteries are hindered by the shuttle effect and the sluggish redox kinetics of polysulfides. In this study, topological insulators (TIs) Bi2Te3−x with abundant Te vacancies embedded in N and B co-doped carbon nanorods (Bi2Te3−x@NBCNs) are synthesized and used as sulfur host composites for high-performance Li–S batteries. Bi2Te3−x@NBCNs effectively enhance the intrinsic conductivity, strengthened the chemical affinity, and accelerated the redox kinetics of polysulfides. 1D carbon nanorods with N and B co-doped heteroatoms endowed with abundant polar sites improve the chemical affinity of polysulfides, while the embedded Bi2Te3−x nanoparticles further promote the nucleation and electrodeposition of Li2S2/Li2S. In situ Raman spectroscopy confirms that Bi2Te3−x@NBCNs effectively reduced cathode-side accumulation of polysulfides and suppressed the shuttle effect. Owing to the extraordinary synergistic effects of rich heteroatom polar sites and conductive topological surface states, Bi2Te3−x@NBCN-based cells exhibit a high initial specific capacity of 1264 mAh g−1 at 0.2 C and ultra-long lifetime (>1000 cycles, with a degradation rate of 0.02% per cycle at 1.0 C). The fundamental insights offered by this work are likely to enable improvement of the electrochemical performance of Li–S batteries based on TI materials.

Original languageEnglish
Article number2214161
JournalAdvanced Functional Materials
Volume33
Issue number20
DOIs
StatePublished - 12 May 2023
Externally publishedYes

Keywords

  • Li–S batteries
  • heteroatoms
  • redox process
  • topological insulators
  • vacancies

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