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Uniformity of TiN films fabricated by hollow cathode discharge

  • Haifu Jiang
  • , Chunzhi Gong
  • , Xiubo Tian*
  • , Shiqin Yang
  • , R. K.Y. Fu
  • , P. K. Chu
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • City University of Hong Kong

Research output: Contribution to journalArticlepeer-review

Abstract

Titanium nitride (TiN) films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition (HC-PVD). Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency (RF). The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy (AFM) revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.

Original languageEnglish
Pages (from-to)212-217
Number of pages6
JournalPlasma Science and Technology
Volume12
Issue number2
DOIs
StatePublished - 2010
Externally publishedYes

Keywords

  • Hollow cathode
  • TiN film
  • Uniformity

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