@inproceedings{b39fa4bfae524d09aaf3fd83466e5e03,
title = "Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior",
abstract = "Process induced variation of contact resistance (Rc) in Ti/graphene (single or multi-layer) devices is investigated physically and electrically. It is proposed that the increased Rc can be attributed to the carbon defects (vacancies) created during SPUTTER process, which is evidenced by Raman spectra. For the first time, the asymmetric behaviors in hole and electron transportation regions in different metal/SLG devices are experimentally understood using scanning Kelvin probe microscopy technique. The asymmetric behavior in hole and electron transportation regions is attributed to the transition from p-p-p (n-p-n) to p-n-p (n-n-n) junction under the modulation of Vbg.",
author = "Liu, \{W. J.\} and Li, \{M. F.\} and Xu, \{S. H.\} and Q. Zhang and Zhu, \{Y. H.\} and Pey, \{K. L.\} and Hu, \{H. L.\} and Shen, \{Z. X.\} and X. Zou and Wang, \{J. L.\} and J. Wei and Zhu, \{H. L.\} and Yu, \{H. Y.\}",
year = "2010",
doi = "10.1109/IEDM.2010.5703420",
language = "英语",
isbn = "9781424474196",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "23.3.1--23.3.4",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",
note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",
}