Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

W. J. Liu; H. Y. Yu; S. H. Xu; Q. Zhang; X. Zou; J. L. Wang; K. L. Pey; J. Wei; H. L. Zhu; M. F. Li

doi:10.1109/LED.2010.2093500

Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

W. J. Liu
, H. Y. Yu
, S. H. Xu
, Q. Zhang
, X. Zou
, J. L. Wang
, K. L. Pey
, J. Wei
, H. L. Zhu
, M. F. Li

Nanyang Technological University
Agency for Science, Technology and Research, Singapore
CAS - Institute of Microelectronics
Fudan University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (R_odd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with F_intrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene.

Original language	English
Article number	5672574
Pages (from-to)	128-130
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	2
DOIs	https://doi.org/10.1109/LED.2010.2093500
State	Published - Feb 2011
Externally published	Yes

Keywords

Asymmetric transport
field-effect transistors (FETs)
graphene
scanning Kelvin probe microscopy (SKPM)

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10.1109/LED.2010.2093500

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title = "Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy",

abstract = "Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene.",

keywords = "Asymmetric transport, field-effect transistors (FETs), graphene, scanning Kelvin probe microscopy (SKPM)",

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year = "2011",

month = feb,

doi = "10.1109/LED.2010.2093500",

language = "英语",

volume = "32",

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journal = "IEEE Electron Device Letters",

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AU - Liu, W. J.

AU - Yu, H. Y.

AU - Xu, S. H.

AU - Zhang, Q.

AU - Zou, X.

AU - Wang, J. L.

AU - Pey, K. L.

AU - Wei, J.

AU - Zhu, H. L.

AU - Li, M. F.

PY - 2011/2

Y1 - 2011/2

N2 - Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene.

AB - Scanning Kelvin probe microscopy (SKPM) is applied to experimentally understand the asymmetric behaviors in hole and electron transportation regions in graphene fieldeffect transistors (FETs). With gate modulation, the transition from p-p-p to p-n-p (for a Ag or Pd source/drain junction with graphene) or from n-p-n to n-n-n (for an Al source/drain junction with graphene) is verified by SKPM, which is believed to be responsible for the asymmetric transport. The odd resistance (Rodd) is positive for Ag (or Pd)/single-layer- graphene (SLG) FETs with Fintrinsic > 0, while Rodd is negative for Al/SLG devices with F intrinsic 0, where F intrinsic is defined as the work function difference between metal and intrinsic graphene.

KW - Asymmetric transport

KW - field-effect transistors (FETs)

KW - graphene

KW - scanning Kelvin probe microscopy (SKPM)

UR - https://www.scopus.com/pages/publications/79151472671

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DO - 10.1109/LED.2010.2093500

M3 - 文章

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5672574

ER -

Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

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Keywords

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