Ultrafast carrier dynamics in SnOx thin films

Zhong Guo Li; Lingyan Liang; Hongtao Cao; Zhengguo Xiao; Xingzhi Wu; Yu Fang; Junyi Yang; Tai Huei Wei; Ying Lin Song

doi:10.1063/1.4914546

Ultrafast carrier dynamics in SnO_x thin films

Zhong Guo Li
, Lingyan Liang^*
, Hongtao Cao
, Zhengguo Xiao
, Xingzhi Wu
, Yu Fang
, Junyi Yang
, Tai Huei Wei
, Ying Lin Song

^*Corresponding author for this work

School of Physics

Harbin Institute of Technology
CAS - Ningbo Institute of Material Technology and Engineering
Soochow University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We studied the carrier dynamics in a series of SnO_x thin films using femtosecond transient absorption (TA) spectroscopy. The observed carrier relaxation was found to be strongly dependent on thin film stoichiometry. The TA spectra corresponding to free carriers, trapped carriers, and state filling were observed in the picosecond time region for SnO₂, SnO_x, and SnO film, respectively. The TA decay kinetics of all films were best fit with a tri-exponential decay model with fast (1 ps), medium (∼10 ps), and slow (ns) components. Our results revealed the carrier relaxation and recombination processes in SnO_x thin films, identifying the critical role of stoichiometry in photo-induced phenomena.

Original language	English
Article number	102103
Journal	Applied Physics Letters
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.4914546
State	Published - 9 Mar 2015

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title = "Ultrafast carrier dynamics in SnOx thin films",

abstract = "We studied the carrier dynamics in a series of SnOx thin films using femtosecond transient absorption (TA) spectroscopy. The observed carrier relaxation was found to be strongly dependent on thin film stoichiometry. The TA spectra corresponding to free carriers, trapped carriers, and state filling were observed in the picosecond time region for SnO2, SnOx, and SnO film, respectively. The TA decay kinetics of all films were best fit with a tri-exponential decay model with fast (1 ps), medium (∼10 ps), and slow (ns) components. Our results revealed the carrier relaxation and recombination processes in SnOx thin films, identifying the critical role of stoichiometry in photo-induced phenomena.",

author = "Li, \{Zhong Guo\} and Lingyan Liang and Hongtao Cao and Zhengguo Xiao and Xingzhi Wu and Yu Fang and Junyi Yang and Wei, \{Tai Huei\} and Song, \{Ying Lin\}",

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doi = "10.1063/1.4914546",

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T1 - Ultrafast carrier dynamics in SnOx thin films

AU - Li, Zhong Guo

AU - Liang, Lingyan

AU - Cao, Hongtao

AU - Xiao, Zhengguo

AU - Wu, Xingzhi

AU - Fang, Yu

AU - Yang, Junyi

AU - Wei, Tai Huei

AU - Song, Ying Lin

PY - 2015/3/9

Y1 - 2015/3/9

N2 - We studied the carrier dynamics in a series of SnOx thin films using femtosecond transient absorption (TA) spectroscopy. The observed carrier relaxation was found to be strongly dependent on thin film stoichiometry. The TA spectra corresponding to free carriers, trapped carriers, and state filling were observed in the picosecond time region for SnO2, SnOx, and SnO film, respectively. The TA decay kinetics of all films were best fit with a tri-exponential decay model with fast (1 ps), medium (∼10 ps), and slow (ns) components. Our results revealed the carrier relaxation and recombination processes in SnOx thin films, identifying the critical role of stoichiometry in photo-induced phenomena.

AB - We studied the carrier dynamics in a series of SnOx thin films using femtosecond transient absorption (TA) spectroscopy. The observed carrier relaxation was found to be strongly dependent on thin film stoichiometry. The TA spectra corresponding to free carriers, trapped carriers, and state filling were observed in the picosecond time region for SnO2, SnOx, and SnO film, respectively. The TA decay kinetics of all films were best fit with a tri-exponential decay model with fast (1 ps), medium (∼10 ps), and slow (ns) components. Our results revealed the carrier relaxation and recombination processes in SnOx thin films, identifying the critical role of stoichiometry in photo-induced phenomena.

UR - https://www.scopus.com/pages/publications/84924871451

U2 - 10.1063/1.4914546

DO - 10.1063/1.4914546

M3 - 文章

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SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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ER -

Ultrafast carrier dynamics in SnO_x thin films

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