Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides

Jiayuan Li; Ke Xu; Jiangbing Du

doi:10.1109/JPHOT.2017.2716956

Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides

Jiayuan Li
, Ke Xu^*
, Jiangbing Du

^*Corresponding author for this work

Harbin Institute of Technology Shenzhen
Shanghai Jiao Tong University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Aluminum nitride (AlN) is an emerging platform for a wide range of on-chip applications. One promising feature is that both the second- and third-order nonlinearities are available in crystalline AlN waveguides. We design an AlN slot waveguide with a flat and low dispersion over an ultrawide spectral range from near-infrared to mid-infrared. A dual-slot structure is designed and the flattened group velocity dispersion within -13 and +11 ps/(nm·km) over 2000-nm-wide bandwidth with three zero dispersion wavelengths is achieved. The impacts of the structural parameters are analyzed in detail and the phase-matching condition in four-wave mixing process is investigated as well. A 3-dB conversion bandwidth of 1200 nm and -28-dB conversion efficiency are predicted in a 1-cm-long horizontal dual-slot AlN waveguide with the pump power of 2 W.

Original language	English
Article number	7953499
Journal	IEEE Photonics Journal
Volume	9
Issue number	4
DOIs	https://doi.org/10.1109/JPHOT.2017.2716956
State	Published - Aug 2017
Externally published	Yes

Keywords

Waveguides
nonlinear optical effects in semiconductors

Access to Document

10.1109/JPHOT.2017.2716956

Cite this

@article{ceca1d21db3e4a19bdbc38ac5605ffb0,

title = "Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides",

abstract = "Aluminum nitride (AlN) is an emerging platform for a wide range of on-chip applications. One promising feature is that both the second- and third-order nonlinearities are available in crystalline AlN waveguides. We design an AlN slot waveguide with a flat and low dispersion over an ultrawide spectral range from near-infrared to mid-infrared. A dual-slot structure is designed and the flattened group velocity dispersion within -13 and +11 ps/(nm·km) over 2000-nm-wide bandwidth with three zero dispersion wavelengths is achieved. The impacts of the structural parameters are analyzed in detail and the phase-matching condition in four-wave mixing process is investigated as well. A 3-dB conversion bandwidth of 1200 nm and -28-dB conversion efficiency are predicted in a 1-cm-long horizontal dual-slot AlN waveguide with the pump power of 2 W.",

keywords = "Waveguides, nonlinear optical effects in semiconductors",

author = "Jiayuan Li and Ke Xu and Jiangbing Du",

note = "Publisher Copyright: {\textcopyright} 2009-2012 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/JPHOT.2017.2716956",

language = "英语",

volume = "9",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides

AU - Li, Jiayuan

AU - Xu, Ke

AU - Du, Jiangbing

PY - 2017/8

Y1 - 2017/8

N2 - Aluminum nitride (AlN) is an emerging platform for a wide range of on-chip applications. One promising feature is that both the second- and third-order nonlinearities are available in crystalline AlN waveguides. We design an AlN slot waveguide with a flat and low dispersion over an ultrawide spectral range from near-infrared to mid-infrared. A dual-slot structure is designed and the flattened group velocity dispersion within -13 and +11 ps/(nm·km) over 2000-nm-wide bandwidth with three zero dispersion wavelengths is achieved. The impacts of the structural parameters are analyzed in detail and the phase-matching condition in four-wave mixing process is investigated as well. A 3-dB conversion bandwidth of 1200 nm and -28-dB conversion efficiency are predicted in a 1-cm-long horizontal dual-slot AlN waveguide with the pump power of 2 W.

AB - Aluminum nitride (AlN) is an emerging platform for a wide range of on-chip applications. One promising feature is that both the second- and third-order nonlinearities are available in crystalline AlN waveguides. We design an AlN slot waveguide with a flat and low dispersion over an ultrawide spectral range from near-infrared to mid-infrared. A dual-slot structure is designed and the flattened group velocity dispersion within -13 and +11 ps/(nm·km) over 2000-nm-wide bandwidth with three zero dispersion wavelengths is achieved. The impacts of the structural parameters are analyzed in detail and the phase-matching condition in four-wave mixing process is investigated as well. A 3-dB conversion bandwidth of 1200 nm and -28-dB conversion efficiency are predicted in a 1-cm-long horizontal dual-slot AlN waveguide with the pump power of 2 W.

KW - Waveguides

KW - nonlinear optical effects in semiconductors

UR - https://www.scopus.com/pages/publications/85021823946

U2 - 10.1109/JPHOT.2017.2716956

DO - 10.1109/JPHOT.2017.2716956

M3 - 文章

AN - SCOPUS:85021823946

SN - 1943-0655

VL - 9

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 4

M1 - 7953499

ER -

Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this