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Ultra-compact polarization-independent 3 dB power splitter in silicon

  • Aoxue Zhang
  • , Lipeng Xia
  • , Ting Li
  • , Chang Chang
  • , Peiji Zhou
  • , Xiaochuan Xu
  • , Yi Zou*
  • *Corresponding author for this work
  • ShanghaiTech University
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • University of Chinese Academy of Sciences
  • Harbin Institute of Technology Shenzhen
  • Shanghai Engineering Research Center of Energy Efficient and Custom AI IC

Research output: Contribution to journalArticlepeer-review

Abstract

We experimentally demonstrate an ultra-compact polarization-independent 3 dB power splitter on the silicon-on-insulator platform. Subwavelength structure engineering is employed to balance the coupling coefficients of TE andTMpolarizations as well as a footprint reduction. The device possesses ultra-compact (1.2 μm×2.62 μm) and polarization-independent features with an operating bandwidth over 50 nm (from 1540 to 1590 nm).

Original languageEnglish
Pages (from-to)5000-5003
Number of pages4
JournalOptics Letters
Volume46
Issue number19
DOIs
StatePublished - 1 Oct 2021
Externally publishedYes

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