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Ubiquitous Topological States of Phonons in Solids: Silicon as a Model Material

  • Yizhou Liu
  • , Nianlong Zou
  • , Sibo Zhao
  • , Xiaobin Chen*
  • , Yong Xu*
  • , Wenhui Duan
  • *Corresponding author for this work
  • Tsinghua University
  • Weizmann Institute of Science
  • Harbin Institute of Technology
  • Harbin Institute of Technology Shenzhen
  • Shanxi University
  • Tencent
  • Frontier Science Center for Quantum Information
  • RIKEN

Research output: Contribution to journalArticlepeer-review

Abstract

Research on topological physics of phonons has attracted enormous interest but demands appropriate model materials. Our ab initio calculations identify silicon as an ideal candidate material containing extraordinarily rich topological phonon states. In silicon, we identify various topological nodal lines characterized by quantized Berry phase π, which gives drumhead surface states observable from any surface orientations. Remarkably, a novel type of topological nexus phonon is discovered which is featured by double Fermi-arc-like surface states but requires neither inversion nor time-reversal symmetry breaking. Versatile topological states can be created from the nexus phonons, such as Hopf nodal links by strain. Furthermore, we generalize the symmetry analysis to other centrosymmetric systems and find numerous candidate materials, demonstrating the ubiquitous existence of topological phonons in solids. These findings open up new opportunities for studying topological phonons in realistic materials and their influence on surface physics.

Original languageEnglish
Pages (from-to)2120-2126
Number of pages7
JournalNano Letters
Volume22
Issue number5
DOIs
StatePublished - 9 Mar 2022
Externally publishedYes

Keywords

  • Berry phase of phonon
  • nexus phonons
  • silicon
  • topological nodal lines

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