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Type-II GaSe/MoS2 van der Waals Heterojunction for High-Performance Flexible Photodetector

  • Shuai Wang
  • , Xiaoqiu Tang
  • , Ezimetjan Alim
  • , Xingdong Sun
  • , Zheng Wei*
  • , Hualong Tao
  • , Yang Wen
  • , Sumei Wu
  • , Yongqing Cai
  • , Yingying Wang
  • , Yao Liang
  • , Zhihua Zhang
  • *Corresponding author for this work
  • Dalian Jiaotong University
  • Southern University of Science and Technology
  • Harbin Institute of Technology Weihai

Research output: Contribution to journalArticlepeer-review

Abstract

In recent years, two-dimensional (2D) type-II van der Waals (vdW) heterojunctions have emerged as promising candidates for high-performance photodetectors. However, direct experimental evidence confirming the enhancement of photoelectric properties by the heterojunction’s type and structure remains scarce. In this work, we present flexible photodetectors based on individual GaSe and MoS2, as well as a vertically stacked type-II GaSe/MoS2 vdW heterojunction on polyethylene terephthalate (PET) substrate. These devices demonstrate outstanding responsivities and rapid response speeds, ensuring stable and repeatable light detection. It is notable that the GaSe/MoS2 heterojunction photodetector exhibits the highest on-off ratio and fastest response speed, attributed to the formation of type-II band alignment. Furthermore, the GaSe/MoS2 heterojunction photodetector maintains robust stability even in a bent state, highlighting remarkable flexibility. This work exemplifies the type-II vdW heterojunctions in enhancing photoelectric properties through direct in-situ experimentation, laying the groundwork for practical applications of 2D flexible photodetectors.

Original languageEnglish
Article number1602
JournalCrystals
Volume13
Issue number11
DOIs
StatePublished - Nov 2023
Externally publishedYes

Keywords

  • GaSe
  • MoS
  • flexible photodetector
  • type-II vdW heterojunction

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