Skip to main navigation Skip to search Skip to main content

Tuning parametric processes in semiconductor diode lasers

  • Nima Zareian
  • , Dongpeng Kang
  • , Amr S. Helmy*
  • *Corresponding author for this work
  • University of Toronto
  • School of Astronautics, Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

We present GaAs/AlGaAs semiconductor lasers in which second-order nonlinearities are phase matched for efficient second-order nonlinear conversion. A comprehensive study of difference frequency generation (DFG) is presented, and the process is characterized for tuning, efficiency, and tolerances. External nonlinear conversion efficiency of 1.84 × 10-2%/W/cm2 is measured for the DFG process. The effects of carrier injection and temperature variation on DFG wavelength are studied, and the two effects are deconvolved for better understanding of carrier effects on nonlinear conversion. A wide DFG tuning range for the device operation is experimentally demonstrated where the idler wavelength can be tuned more than 30 nm for every 1-nm span of the pump wavelength.

Original languageEnglish
Pages (from-to)552-557
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume35
Issue number3
DOIs
StatePublished - 1 Mar 2018
Externally publishedYes

Fingerprint

Dive into the research topics of 'Tuning parametric processes in semiconductor diode lasers'. Together they form a unique fingerprint.

Cite this