Tunable photoresponse of epitaxial graphene on SiC

Rujie Sun; Ye Zhang; Kang Li; Chao Hui; Ke He; Xucun Ma; Feng Liu

doi:10.1063/1.4812986

Tunable photoresponse of epitaxial graphene on SiC

Rujie Sun
, Ye Zhang
, Kang Li
, Chao Hui
, Ke He
, Xucun Ma
, Feng Liu^*

^*Corresponding author for this work

University of Utah
CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. ∼10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of electric field near the metal/EG contact. A maximum photoresponsivity of 1.11 mA/W without bias was achieved at the Pd/EG contact in the 10-layer EG device. Photocurrent was also observed under AM 1.5 illumination. Our experiments demonstrate the high tunability of this EG photodetector by varying EG thickness, metal leads, channel length, and/or illumination area.

Original language	English
Article number	013106
Journal	Applied Physics Letters
Volume	103
Issue number	1
DOIs	https://doi.org/10.1063/1.4812986
State	Published - 1 Jul 2013
Externally published	Yes

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10.1063/1.4812986

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title = "Tunable photoresponse of epitaxial graphene on SiC",

abstract = "We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. ∼10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of electric field near the metal/EG contact. A maximum photoresponsivity of 1.11 mA/W without bias was achieved at the Pd/EG contact in the 10-layer EG device. Photocurrent was also observed under AM 1.5 illumination. Our experiments demonstrate the high tunability of this EG photodetector by varying EG thickness, metal leads, channel length, and/or illumination area.",

author = "Rujie Sun and Ye Zhang and Kang Li and Chao Hui and Ke He and Xucun Ma and Feng Liu",

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T1 - Tunable photoresponse of epitaxial graphene on SiC

AU - Sun, Rujie

AU - Zhang, Ye

AU - Li, Kang

AU - Hui, Chao

AU - He, Ke

AU - Ma, Xucun

AU - Liu, Feng

PY - 2013/7/1

Y1 - 2013/7/1

N2 - We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. ∼10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of electric field near the metal/EG contact. A maximum photoresponsivity of 1.11 mA/W without bias was achieved at the Pd/EG contact in the 10-layer EG device. Photocurrent was also observed under AM 1.5 illumination. Our experiments demonstrate the high tunability of this EG photodetector by varying EG thickness, metal leads, channel length, and/or illumination area.

AB - We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. ∼10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of electric field near the metal/EG contact. A maximum photoresponsivity of 1.11 mA/W without bias was achieved at the Pd/EG contact in the 10-layer EG device. Photocurrent was also observed under AM 1.5 illumination. Our experiments demonstrate the high tunability of this EG photodetector by varying EG thickness, metal leads, channel length, and/or illumination area.

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U2 - 10.1063/1.4812986

DO - 10.1063/1.4812986

M3 - 文章

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SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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ER -

Tunable photoresponse of epitaxial graphene on SiC

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