Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

Xuesong Zheng; Yuhang Wang; Rigen Mo; Chaoming Liu; Tianqi Wang; Mingxue Huo; Liyi Xiao

doi:10.3390/electronics14030473

Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

Xuesong Zheng
, Yuhang Wang
, Rigen Mo
, Chaoming Liu
, Tianqi Wang
, Mingxue Huo
, Liyi Xiao^*

^*Corresponding author for this work

School of Astronautics

School of Astronautics, Harbin Institute of Technology
China Aerospace Components Engineering Center
School of Physics, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states. It was observed that the data pattern stored in Flash influences the bit error count after irradiation. The experimental findings demonstrated a dose-dependent relationship with standby current, read operation current, and threshold voltage shifts. Additionally, TID was found to affect the time required for erasure and programming operations. These results were then bench-marked against similar NAND Flash devices, revealing superior resistance to TID effects.

Original language	English
Article number	473
Journal	Electronics (Switzerland)
Volume	14
Issue number	3
DOIs	https://doi.org/10.3390/electronics14030473
State	Published - Feb 2025

Keywords

NAND flash
RBER
standby current
total ionizing dose (TID)

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@article{951b3926ff8a44faa4d961f0124fe833,

title = "Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory",

abstract = "The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states. It was observed that the data pattern stored in Flash influences the bit error count after irradiation. The experimental findings demonstrated a dose-dependent relationship with standby current, read operation current, and threshold voltage shifts. Additionally, TID was found to affect the time required for erasure and programming operations. These results were then bench-marked against similar NAND Flash devices, revealing superior resistance to TID effects.",

keywords = "NAND flash, RBER, standby current, total ionizing dose (TID)",

author = "Xuesong Zheng and Yuhang Wang and Rigen Mo and Chaoming Liu and Tianqi Wang and Mingxue Huo and Liyi Xiao",

note = "Publisher Copyright: {\textcopyright} 2025 by the authors.",

year = "2025",

month = feb,

doi = "10.3390/electronics14030473",

language = "英语",

volume = "14",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "3",

}

TY - JOUR

T1 - Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

AU - Zheng, Xuesong

AU - Wang, Yuhang

AU - Mo, Rigen

AU - Liu, Chaoming

AU - Wang, Tianqi

AU - Huo, Mingxue

AU - Xiao, Liyi

PY - 2025/2

Y1 - 2025/2

N2 - The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states. It was observed that the data pattern stored in Flash influences the bit error count after irradiation. The experimental findings demonstrated a dose-dependent relationship with standby current, read operation current, and threshold voltage shifts. Additionally, TID was found to affect the time required for erasure and programming operations. These results were then bench-marked against similar NAND Flash devices, revealing superior resistance to TID effects.

AB - The impacts of total ionizing dose (TID) were investigated in 28 nm 3D charge trapping (CT) NAND Flash memories. This study focused on the variations in the raw bit error rate (RBER) of irradiated flash across different operational modes and bias states. It was observed that the data pattern stored in Flash influences the bit error count after irradiation. The experimental findings demonstrated a dose-dependent relationship with standby current, read operation current, and threshold voltage shifts. Additionally, TID was found to affect the time required for erasure and programming operations. These results were then bench-marked against similar NAND Flash devices, revealing superior resistance to TID effects.

KW - NAND flash

KW - RBER

KW - standby current

KW - total ionizing dose (TID)

UR - https://www.scopus.com/pages/publications/85217581013

U2 - 10.3390/electronics14030473

DO - 10.3390/electronics14030473

M3 - 文章

AN - SCOPUS:85217581013

SN - 2079-9292

VL - 14

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 3

M1 - 473

ER -

Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory

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Keywords

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