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Total ionizing dose effect and displacement damage of visible light CCD devices

  • Hang Yu
  • , Jun Luo
  • , Zhen Li
  • , Ke Wen
  • , Tianqi Wang*
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Cetc Academy of Chips Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper explores the effects of total dose and 10 MeV proton irradiation on a domestic 128x20 visible light CCD detector, focusing on CCD structure, experimental methods, and parameter changes. Dark current is identified as the most sensitive parameter, and its degradation mechanism is analyzed.

Original languageEnglish
Title of host publicationInternational Conference on Optical Engineering, Sensing, and Instruments, OESI 2025
EditorsWeiyong Yu, Keyu Xia
PublisherSPIE
ISBN (Electronic)9781510699700
DOIs
StatePublished - 17 Dec 2025
EventInternational Conference on Optical Engineering, Sensing, and Instruments, OESI 2025 - Changsha, China
Duration: 18 Aug 202520 Aug 2025

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume14007
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceInternational Conference on Optical Engineering, Sensing, and Instruments, OESI 2025
Country/TerritoryChina
CityChangsha
Period18/08/2520/08/25

Keywords

  • CCD
  • Proton
  • Radiation
  • TID

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