Through glass via technology for advanced packaging: fabrication, metallization, applications, and reliability challenges

Through glass via (TGV) technology, as an important integrated structure for advanced packaging, demonstrates broad application prospects in radio frequency devices, high-density heterogeneous integration devices, and optoelectronic co-packaged devices, owing to its excellent high-frequency performance, low dielectric loss, and well-matched coefficient of thermal expansion (CTE) with Si. This paper systematically reviews the development of TGV technology, including the fabrication processes of TGV, the current application research status, and recent advancements in reliability studies. After summarizing common interconnect failure mechanisms, the paper identifies the current shortcomings in reliability research, including studies on multi-field coupled failures, collaborative evaluation of multiple performance parameters, and the development of failure analysis methods. Finally, in response to the demand for developing next-generation high-performance devices based on TGV technology, the paper analyzes key areas requiring further attention in future reliability research. This review aims to provide insights and references for subsequent systematic reliability studies on glass interposers and TGV technology.