Abstract
Three-dimensional deposition of 15 nm thick ZnO thin layer can be achieved successfully on nanopatterned silicon substrate. The nanopatterned silicon (NPSi) substrate was prepared by two-step ICP etching using anodic aluminum oxide (AAO) film as etching mask. The average diameter and depth for the silicon nanopore arrays are approximately 60 nm and 300 nm, respectively. Also, the NPSi substrate was entirely covered by ZnO thin layer grown by atomic layer deposition. It is believed that the above-mentioned process may provide a good alternative for the preparation of three-dimensional ZnO film and device.
| Original language | English |
|---|---|
| Pages (from-to) | 34-37 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 181 |
| DOIs | |
| State | Published - 15 Oct 2016 |
| Externally published | Yes |
Keywords
- 3D ZnO thin layer
- Atomic layer deposition
- Inductively coupled plasma
- Microstructure
- Nanopatterned silicon substrate
- Semiconductors
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