Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Cui Zu Chang; Jinsong Zhang; Minhao Liu; Zuocheng Zhang; Xiao Feng; Kang Li; Li Li Wang; Xi Chen; Xi Dai; Zhong Fang; Xiao Liang Qi; Shou Cheng Zhang; Yayu Wang; Ke He; Xu Cun Ma; Qi Kun Xue

doi:10.1002/adma.201203493

Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Cui Zu Chang
, Jinsong Zhang
, Minhao Liu
, Zuocheng Zhang
, Xiao Feng
, Kang Li
, Li Li Wang
, Xi Chen
, Xi Dai
, Zhong Fang
, Xiao Liang Qi
, Shou Cheng Zhang
, Yayu Wang^*
, Ke He
, Xu Cun Ma
, Qi Kun Xue

^*Corresponding author for this work

CAS - Institute of Physics
Tsinghua University
Stanford University

Research output: Contribution to journal › Article › peer-review

269 Scopus citations

Abstract

Thin films of magnetically doped topological insulators Cr _0.22(Bi_xSb_1-x)_1.78Te₃ are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

Original language	English
Pages (from-to)	1065-1070
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	7
DOIs	https://doi.org/10.1002/adma.201203493
State	Published - 20 Feb 2013
Externally published	Yes

Keywords

anomalous hall effect
ferromagnetic insulator
field effect
molecular beam epitaxy
topological insulator

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10.1002/adma.201203493

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title = "Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order",

abstract = "Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.",

keywords = "anomalous hall effect, ferromagnetic insulator, field effect, molecular beam epitaxy, topological insulator",

author = "Chang, \{Cui Zu\} and Jinsong Zhang and Minhao Liu and Zuocheng Zhang and Xiao Feng and Kang Li and Wang, \{Li Li\} and Xi Chen and Xi Dai and Zhong Fang and Qi, \{Xiao Liang\} and Zhang, \{Shou Cheng\} and Yayu Wang and Ke He and Ma, \{Xu Cun\} and Xue, \{Qi Kun\}",

year = "2013",

month = feb,

day = "20",

doi = "10.1002/adma.201203493",

language = "英语",

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TY - JOUR

T1 - Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

AU - Chang, Cui Zu

AU - Zhang, Jinsong

AU - Liu, Minhao

AU - Zhang, Zuocheng

AU - Feng, Xiao

AU - Li, Kang

AU - Wang, Li Li

AU - Chen, Xi

AU - Dai, Xi

AU - Fang, Zhong

AU - Qi, Xiao Liang

AU - Zhang, Shou Cheng

AU - Wang, Yayu

AU - He, Ke

AU - Ma, Xu Cun

AU - Xue, Qi Kun

PY - 2013/2/20

Y1 - 2013/2/20

N2 - Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

AB - Thin films of magnetically doped topological insulators Cr 0.22(BixSb1-x)1.78Te3 are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

KW - anomalous hall effect

KW - ferromagnetic insulator

KW - field effect

KW - molecular beam epitaxy

KW - topological insulator

UR - https://www.scopus.com/pages/publications/84874069941

U2 - 10.1002/adma.201203493

DO - 10.1002/adma.201203493

M3 - 文章

AN - SCOPUS:84874069941

SN - 0935-9648

VL - 25

SP - 1065

EP - 1070

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order

Abstract

Keywords

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