Thermoelectric transport properties of highly oriented FeSb2 thin films

Y. Sun; S. Johnsen; P. Eklund; M. Sillassen; J. Bøttiger; N. Oeschler; P. Sun; F. Steglich; B. B. Iversen

doi:10.1063/1.3155800

Thermoelectric transport properties of highly oriented FeSb₂ thin films

Y. Sun
, S. Johnsen
, P. Eklund
, M. Sillassen
, J. Bøttiger
, N. Oeschler
, P. Sun
, F. Steglich
, B. B. Iversen

Aarhus University
Linköping University
Max Planck Institute for Chemical Physics of Solids

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Highly textured FeSb₂ films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K^-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb₂ films. By comparing with the transport properties of FeSb₂ single crystals and an extrinsically doped FeSb_1.98 Te_0.02 single crystal, the thermoelectric properties of the FeSb₂ films are demonstrated to be dominated by the intrinsic properties of FeSb₂ at a high charge carrier concentration.

Original language	English
Article number	033710
Journal	Journal of Applied Physics
Volume	106
Issue number	3
DOIs	https://doi.org/10.1063/1.3155800
State	Published - 2009
Externally published	Yes

Access to Document

10.1063/1.3155800

Cite this

@article{8ed404b9709a4ad789e7fdcbaf2875a0,

title = "Thermoelectric transport properties of highly oriented FeSb2 thin films",

abstract = "Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98 Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.",

author = "Y. Sun and S. Johnsen and P. Eklund and M. Sillassen and J. B{\o}ttiger and N. Oeschler and P. Sun and F. Steglich and Iversen, \{B. B.\}",

year = "2009",

doi = "10.1063/1.3155800",

language = "英语",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Thermoelectric transport properties of highly oriented FeSb2 thin films

AU - Sun, Y.

AU - Johnsen, S.

AU - Eklund, P.

AU - Sillassen, M.

AU - Bøttiger, J.

AU - Oeschler, N.

AU - Sun, P.

AU - Steglich, F.

AU - Iversen, B. B.

PY - 2009

Y1 - 2009

N2 - Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98 Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.

AB - Highly textured FeSb2 films were produced on quartz wafers by a sputtering method. Their resistivity and Seebeck coefficient (S) were measured and a maximum absolute value of S∼160 μV K-1 at 50 K was obtained. Hall measurements were employed to study the charge carrier concentrations and Hall mobilities of the FeSb2 films. By comparing with the transport properties of FeSb2 single crystals and an extrinsically doped FeSb1.98 Te0.02 single crystal, the thermoelectric properties of the FeSb2 films are demonstrated to be dominated by the intrinsic properties of FeSb2 at a high charge carrier concentration.

UR - https://www.scopus.com/pages/publications/69149095102

U2 - 10.1063/1.3155800

DO - 10.1063/1.3155800

M3 - 文章

AN - SCOPUS:69149095102

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033710

ER -

Thermoelectric transport properties of highly oriented FeSb₂ thin films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this