Thermoelectric properties of materials near the band crossing line in Mg2Sn-Mg2Ge-Mg2Si system

Jun Mao; Hee Seok Kim; Jing Shuai; Zihang Liu; Ran He; Udara Saparamadu; Fei Tian; Weishu Liu; Zhifeng Ren

doi:10.1016/j.actamat.2015.11.006

Thermoelectric properties of materials near the band crossing line in Mg₂Sn-Mg₂Ge-Mg₂Si system

Jun Mao
, Hee Seok Kim
, Jing Shuai
, Zihang Liu
, Ran He
, Udara Saparamadu
, Fei Tian
, Weishu Liu^*
, Zhifeng Ren

^*Corresponding author for this work

University of Houston
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg₂Sn_0.765Ge_0.22Sb_0.015 and Mg₂Sn_0.685Si_0.3Sb_0.015 in the Mg₂Sn-Mg₂Ge-Mg₂Si system are investigated. Although ZTs are very similar, power factors are different. On the line, the power factor decreases from Mg₂Sn_0.765Ge_0.22Sb_0.015 to Mg₂Sn_0.685Si_0.3Sb_0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor (PF)_eng and figure of merit (ZT)_eng. It is shown that although similar energy conversion efficiency of ∼11% could be achieved for all compositions studied, the output power are different, increasing from ∼9.1 W cm^-2 for Mg₂Sn_0.685Si_0.3Sb_0.015 to ∼10.3 W cm^-2 for Mg₂Sn_0.765Ge_0.22Sb_0.015, due to the different power factors.

Original language	English
Pages (from-to)	633-642
Number of pages	10
Journal	Acta Materialia
Volume	103
DOIs	https://doi.org/10.1016/j.actamat.2015.11.006
State	Published - 15 Jan 2016
Externally published	Yes

Keywords

Efficiency
MgSn-MgGe-MgSi
Output power
Thermoelectric

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10.1016/j.actamat.2015.11.006

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@article{d3587fad45274cd69797847a8fb5a571,

title = "Thermoelectric properties of materials near the band crossing line in Mg2Sn-Mg2Ge-Mg2Si system",

abstract = "Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg2Sn0.765Ge0.22Sb0.015 and Mg2Sn0.685Si0.3Sb0.015 in the Mg2Sn-Mg2Ge-Mg2Si system are investigated. Although ZTs are very similar, power factors are different. On the line, the power factor decreases from Mg2Sn0.765Ge0.22Sb0.015 to Mg2Sn0.685Si0.3Sb0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor (PF)eng and figure of merit (ZT)eng. It is shown that although similar energy conversion efficiency of ∼11\% could be achieved for all compositions studied, the output power are different, increasing from ∼9.1 W cm-2 for Mg2Sn0.685Si0.3Sb0.015 to ∼10.3 W cm-2 for Mg2Sn0.765Ge0.22Sb0.015, due to the different power factors.",

keywords = "Efficiency, MgSn-MgGe-MgSi, Output power, Thermoelectric",

author = "Jun Mao and Kim, \{Hee Seok\} and Jing Shuai and Zihang Liu and Ran He and Udara Saparamadu and Fei Tian and Weishu Liu and Zhifeng Ren",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier Ltd on behalf of Acta Materialia Inc.",

year = "2016",

month = jan,

day = "15",

doi = "10.1016/j.actamat.2015.11.006",

language = "英语",

volume = "103",

pages = "633--642",

journal = "Acta Materialia",

issn = "1359-6454",

publisher = "Acta Materialia Inc",

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TY - JOUR

T1 - Thermoelectric properties of materials near the band crossing line in Mg2Sn-Mg2Ge-Mg2Si system

AU - Mao, Jun

AU - Kim, Hee Seok

AU - Shuai, Jing

AU - Liu, Zihang

AU - He, Ran

AU - Saparamadu, Udara

AU - Tian, Fei

AU - Liu, Weishu

AU - Ren, Zhifeng

PY - 2016/1/15

Y1 - 2016/1/15

N2 - Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg2Sn0.765Ge0.22Sb0.015 and Mg2Sn0.685Si0.3Sb0.015 in the Mg2Sn-Mg2Ge-Mg2Si system are investigated. Although ZTs are very similar, power factors are different. On the line, the power factor decreases from Mg2Sn0.765Ge0.22Sb0.015 to Mg2Sn0.685Si0.3Sb0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor (PF)eng and figure of merit (ZT)eng. It is shown that although similar energy conversion efficiency of ∼11% could be achieved for all compositions studied, the output power are different, increasing from ∼9.1 W cm-2 for Mg2Sn0.685Si0.3Sb0.015 to ∼10.3 W cm-2 for Mg2Sn0.765Ge0.22Sb0.015, due to the different power factors.

AB - Thermoelectric properties of materials with compositions on and near the band crossing line connecting Mg2Sn0.765Ge0.22Sb0.015 and Mg2Sn0.685Si0.3Sb0.015 in the Mg2Sn-Mg2Ge-Mg2Si system are investigated. Although ZTs are very similar, power factors are different. On the line, the power factor decreases from Mg2Sn0.765Ge0.22Sb0.015 to Mg2Sn0.685Si0.3Sb0.015, and off the line, the power factor also decreases. The output power and energy conversion efficiency are calculated using engineering power factor (PF)eng and figure of merit (ZT)eng. It is shown that although similar energy conversion efficiency of ∼11% could be achieved for all compositions studied, the output power are different, increasing from ∼9.1 W cm-2 for Mg2Sn0.685Si0.3Sb0.015 to ∼10.3 W cm-2 for Mg2Sn0.765Ge0.22Sb0.015, due to the different power factors.

KW - Efficiency

KW - MgSn-MgGe-MgSi

KW - Output power

KW - Thermoelectric

UR - https://www.scopus.com/pages/publications/84947228006

U2 - 10.1016/j.actamat.2015.11.006

DO - 10.1016/j.actamat.2015.11.006

M3 - 文章

AN - SCOPUS:84947228006

SN - 1359-6454

VL - 103

SP - 633

EP - 642

JO - Acta Materialia

JF - Acta Materialia

ER -

Thermoelectric properties of materials near the band crossing line in Mg₂Sn-Mg₂Ge-Mg₂Si system

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Keywords

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