Thermal stability of Mo[sbnd]C alloy Schottky contacts on n-type 4H-SiC

In this work, we propose a Schottky diode that uses Mo[sbnd]C alloy as a Schottky metal to form a Schottky contact. Unlike existing diode designs based on Mo/4H-SiC, the design presented here shows near-ideal behavior at high annealing temperatures. The Schottky interface obtained was studied at different annealing temperatures, and the electrical properties were analyzed by temperature-dependent current and voltage (I-V) and capacitor voltage (C[sbnd]V) measurements. When annealing at 900 °C, its ideality factor was 1.03 and the barrier height reached 1.16 eV. There was no significant change in the ideality factor and barrier height while analyzing the electrical characteristics at different test temperatures. These results show that the structure has good stability at high annealing temperatures. At the same time, the morphology of the metal-semiconductor interface was observed through a transmission electron microscope and combined with the analysis of electrical characteristics, and it can be concluded that the structure has high-temperature annealing stability.