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Thermal shock resistance characterization of a novel porous Cu filled Sn-3Ag-0.5Cu interconnect material for power device packaging

  • Jiahao Liu*
  • , Lijin Qiu
  • , Jixi Huang
  • , Fangzhou Chen
  • , Hongtao Chen*
  • , Wenjie Zhou
  • *Corresponding author for this work
  • Harbin Institute of Technology Shenzhen
  • China Electronic Product Reliability and Environmental Testing Research Institute

Research output: Contribution to journalArticlepeer-review

Abstract

Severe thermal mismatch arising from frequent start-stop cycling of power devices induces periodic shear stress at the bondline, rendering conventional Sn-3Ag-0.5Cu (SAC305) solder-based bondlines susceptible to cracking under temperature shock loading. Herein, a novel interconnect material based on porous copper filled SAC305 was proposed. After 1200 temperature shock cycles, the bondline fabricated with porous Cu filled SAC305 exhibited a crack propagation rate of merely 36.4%, while its shear strength decreased from 45.6 MPa to 25.8 MPa. The results confirm that the porous Cu-filled SAC305 interconnect material possesses excellent temperature shock resistance, making it a promising candidate for high-reliability power device packaging.

Original languageEnglish
Article number140570
JournalMaterials Letters
Volume415
DOIs
StatePublished - 15 Jul 2026
Externally publishedYes

Keywords

  • Crack propagation rate
  • Porous copper
  • Shear strength
  • Sn-3Ag-0.5Cu
  • Thermal shock

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