Therapeutic carbon-ion effects on monolithic active pixel sensor with 130 nm high-resistivity process

B. Yang; J. Duan; L. Jing; Y. Wang; F. Fu; B. Cao; C. Zhao

doi:10.1088/1748-0221/17/01/C01059

Therapeutic carbon-ion effects on monolithic active pixel sensor with 130 nm high-resistivity process

B. Yang
, J. Duan
, L. Jing
, Y. Wang
, F. Fu
, B. Cao
, C. Zhao^*

^*Corresponding author for this work

School of Astronautics

Harbin University of Science and Technology
Shanghai Institute of Satellite Engineering
Harbin Institute of Technology
Heilongjiang University
CAS - Institute of Modern Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kω·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.

Original language	English
Article number	C01059
Journal	Journal of Instrumentation
Volume	17
Issue number	1
DOIs	https://doi.org/10.1088/1748-0221/17/01/C01059
State	Published - Jan 2022

Keywords

Instrumentation for heavy-ion therapy
Particle tracking detectors (Solid-state detectors)
Solid state detectors

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10.1088/1748-0221/17/01/C01059

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title = "Therapeutic carbon-ion effects on monolithic active pixel sensor with 130 nm high-resistivity process",

abstract = "A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kω·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.",

keywords = "Instrumentation for heavy-ion therapy, Particle tracking detectors (Solid-state detectors), Solid state detectors",

author = "B. Yang and J. Duan and L. Jing and Y. Wang and F. Fu and B. Cao and C. Zhao",

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AU - Yang, B.

AU - Duan, J.

AU - Jing, L.

AU - Wang, Y.

AU - Fu, F.

AU - Cao, B.

AU - Zhao, C.

PY - 2022/1

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N2 - A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kω·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.

AB - A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kω·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.

KW - Instrumentation for heavy-ion therapy

KW - Particle tracking detectors (Solid-state detectors)

KW - Solid state detectors

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DO - 10.1088/1748-0221/17/01/C01059

M3 - 文章

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SN - 1748-0221

VL - 17

JO - Journal of Instrumentation

JF - Journal of Instrumentation

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ER -

Therapeutic carbon-ion effects on monolithic active pixel sensor with 130 nm high-resistivity process

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Keywords

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