Theoretical research on piezoresistive coefficients of polysilicon films

Xiaowei Liu; Mingxue Huo; Weiping Chen; Donghong Wang; Ying Zhang

Theoretical research on piezoresistive coefficients of polysilicon films

Xiaowei Liu^*
, Mingxue Huo
, Weiping Chen
, Donghong Wang
, Ying Zhang

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model. The expressions for the piezoresistive coefficients of polysilicon films are obtained. A comparison between the experimental and theoretical results is performed, and a better uniformity is achieved. The presented theory is helpful to theoretical analysis of the piezoresistive properties of polysilicon.

Original language	English
Pages (from-to)	292-296
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	25
Issue number	3
State	Published - Mar 2004

Keywords

Piezoresistive coefficient
Polysilicon
Stress decouple model

Cite this

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title = "Theoretical research on piezoresistive coefficients of polysilicon films",

abstract = "The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model. The expressions for the piezoresistive coefficients of polysilicon films are obtained. A comparison between the experimental and theoretical results is performed, and a better uniformity is achieved. The presented theory is helpful to theoretical analysis of the piezoresistive properties of polysilicon.",

keywords = "Piezoresistive coefficient, Polysilicon, Stress decouple model",

author = "Xiaowei Liu and Mingxue Huo and Weiping Chen and Donghong Wang and Ying Zhang",

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language = "英语",

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pages = "292--296",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Theoretical research on piezoresistive coefficients of polysilicon films

AU - Liu, Xiaowei

AU - Huo, Mingxue

AU - Chen, Weiping

AU - Wang, Donghong

AU - Zhang, Ying

PY - 2004/3

Y1 - 2004/3

N2 - The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model. The expressions for the piezoresistive coefficients of polysilicon films are obtained. A comparison between the experimental and theoretical results is performed, and a better uniformity is achieved. The presented theory is helpful to theoretical analysis of the piezoresistive properties of polysilicon.

AB - The piezoresistive coefficients of polysilicon films in monosilicon grains and grain boundaries are theoretically investigated by using stress decouple model. The expressions for the piezoresistive coefficients of polysilicon films are obtained. A comparison between the experimental and theoretical results is performed, and a better uniformity is achieved. The presented theory is helpful to theoretical analysis of the piezoresistive properties of polysilicon.

KW - Piezoresistive coefficient

KW - Polysilicon

KW - Stress decouple model

UR - https://www.scopus.com/pages/publications/7244259007

M3 - 文章

AN - SCOPUS:7244259007

SN - 0253-4177

VL - 25

SP - 292

EP - 296

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 3

ER -

Theoretical research on piezoresistive coefficients of polysilicon films

Abstract

Keywords

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