TY - GEN
T1 - Theoretical and numerical analysis of EUV lithography mask blank fabrication
AU - Zheng, Liang
PY - 2010
Y1 - 2010
N2 - Extreme Ultraviolet Lithography (EUVL) is the leading candidate for Next-Generation Lithography in the sub-45 nm regime. One of the key problems to be solved before EUVL can be commercialized is the control of the image placements during the EUVL mask fabrication. This paper focuses on the study and analysis of the EUVL mask blank fabrication process. The relations between the distortions of the EUVL mask and the parameters of the stressed thin film layers have been revealed. Theoretical derivation and numerical analysis in this research provide a solid technical support for the EUVL mask blank fabrication process.
AB - Extreme Ultraviolet Lithography (EUVL) is the leading candidate for Next-Generation Lithography in the sub-45 nm regime. One of the key problems to be solved before EUVL can be commercialized is the control of the image placements during the EUVL mask fabrication. This paper focuses on the study and analysis of the EUVL mask blank fabrication process. The relations between the distortions of the EUVL mask and the parameters of the stressed thin film layers have been revealed. Theoretical derivation and numerical analysis in this research provide a solid technical support for the EUVL mask blank fabrication process.
KW - EUV lithography
KW - Finite element method
KW - Mask blank fabrication
UR - https://www.scopus.com/pages/publications/84856138639
U2 - 10.1049/cp.2010.1251
DO - 10.1049/cp.2010.1251
M3 - 会议稿件
AN - SCOPUS:84856138639
SN - 9781849192385
T3 - IET Conference Publications
SP - 16
EP - 19
BT - International Conference on Advanced Technology of Design and Manufacture, ATDM 2010
T2 - International Conference on Advanced Technology of Design and Manufacture, ATDM 2010
Y2 - 23 November 2010 through 25 November 2010
ER -