The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering

Shujie Jiao; Hongliang Lu; Xianghu Wang; Yiyin Nie; Dongbo Wang; Shiyong Gao; Jinzhong Wang

doi:10.1149/2.0161907jss

The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering

Shujie Jiao^*
, Hongliang Lu
, Xianghu Wang
, Yiyin Nie
, Dongbo Wang
, Shiyong Gao
, Jinzhong Wang

^*Corresponding author for this work

Harbin Institute of Technology
Guilin University of Electronic Technology

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Gallium oxide thin films were deposited by radio frequency magnetron sputtering technique. Structural, optical and photoelectrical properties of Ga₂O₃ thin films were investigated in detail. The as-grown Ga₂O₃ thin films were amorphous, while those annealed film were polycrystalline with monoclinic structure. Amorphous and polycrystalline gallium oxide metal-semiconductor-metal photodetectors were fabricated. However, annealed polycrystalline films have no photoresponse for deep ultraviolet light. The responsivity of the photodetector based on as-grown amorphous film is 122.7 μA/W at 256 nm and the ultraviolet (UV)-to-visible rejection ratios were 100, which indicates that the amorphous Ga₂O₃ thin films have potential application for solar-blind photodetector. High concentration of oxygen vacancies of amorphous film are considered to be responsible for photoresponse in amorphous gallium oxide thin films.

Original language	English
Pages (from-to)	Q3086-Q3090
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/2.0161907jss
State	Published - 2019
Externally published	Yes

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@article{b87e1074b7294de98161258ffd2d6f64,

title = "The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering",

abstract = "Gallium oxide thin films were deposited by radio frequency magnetron sputtering technique. Structural, optical and photoelectrical properties of Ga2O3 thin films were investigated in detail. The as-grown Ga2O3 thin films were amorphous, while those annealed film were polycrystalline with monoclinic structure. Amorphous and polycrystalline gallium oxide metal-semiconductor-metal photodetectors were fabricated. However, annealed polycrystalline films have no photoresponse for deep ultraviolet light. The responsivity of the photodetector based on as-grown amorphous film is 122.7 μA/W at 256 nm and the ultraviolet (UV)-to-visible rejection ratios were 100, which indicates that the amorphous Ga2O3 thin films have potential application for solar-blind photodetector. High concentration of oxygen vacancies of amorphous film are considered to be responsible for photoresponse in amorphous gallium oxide thin films.",

author = "Shujie Jiao and Hongliang Lu and Xianghu Wang and Yiyin Nie and Dongbo Wang and Shiyong Gao and Jinzhong Wang",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2019.",

year = "2019",

doi = "10.1149/2.0161907jss",

language = "英语",

volume = "8",

pages = "Q3086--Q3090",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "7",

}

TY - JOUR

T1 - The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering

AU - Jiao, Shujie

AU - Lu, Hongliang

AU - Wang, Xianghu

AU - Nie, Yiyin

AU - Wang, Dongbo

AU - Gao, Shiyong

AU - Wang, Jinzhong

PY - 2019

Y1 - 2019

N2 - Gallium oxide thin films were deposited by radio frequency magnetron sputtering technique. Structural, optical and photoelectrical properties of Ga2O3 thin films were investigated in detail. The as-grown Ga2O3 thin films were amorphous, while those annealed film were polycrystalline with monoclinic structure. Amorphous and polycrystalline gallium oxide metal-semiconductor-metal photodetectors were fabricated. However, annealed polycrystalline films have no photoresponse for deep ultraviolet light. The responsivity of the photodetector based on as-grown amorphous film is 122.7 μA/W at 256 nm and the ultraviolet (UV)-to-visible rejection ratios were 100, which indicates that the amorphous Ga2O3 thin films have potential application for solar-blind photodetector. High concentration of oxygen vacancies of amorphous film are considered to be responsible for photoresponse in amorphous gallium oxide thin films.

AB - Gallium oxide thin films were deposited by radio frequency magnetron sputtering technique. Structural, optical and photoelectrical properties of Ga2O3 thin films were investigated in detail. The as-grown Ga2O3 thin films were amorphous, while those annealed film were polycrystalline with monoclinic structure. Amorphous and polycrystalline gallium oxide metal-semiconductor-metal photodetectors were fabricated. However, annealed polycrystalline films have no photoresponse for deep ultraviolet light. The responsivity of the photodetector based on as-grown amorphous film is 122.7 μA/W at 256 nm and the ultraviolet (UV)-to-visible rejection ratios were 100, which indicates that the amorphous Ga2O3 thin films have potential application for solar-blind photodetector. High concentration of oxygen vacancies of amorphous film are considered to be responsible for photoresponse in amorphous gallium oxide thin films.

UR - https://www.scopus.com/pages/publications/85069087566

U2 - 10.1149/2.0161907jss

DO - 10.1149/2.0161907jss

M3 - 文章

AN - SCOPUS:85069087566

SN - 2162-8769

VL - 8

SP - Q3086-Q3090

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 7

ER -

The structural and photoelectrical properties of gallium oxide thin film grown by radio frequency magnetron sputtering

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