The research on key technologies of LED controllable laser thermal cleavage based on the finite element simulation

After integrated circuit manufactured on the wafer, semiconductor wafer is needed to be separated into chips. It means high cost, wide kerf width, and cause a decline in utilization ratio of wafer when using traditional processing technologies. So this paper put forward a new processing which is called controllable laser thermal cleavage. The key technoloies are researched under different parameters. Through the simulation, the tensile stress is only about 60 Pa. If there is not crack guide groove on the surface, the wafer is difficult to be separated because the stress is small. The guide groove are experimented under different parameters. The guide groove is deeper when using higher laser power, slower speed, repeated ablation. There are four layers in the cross section of controllable laser thermal cleavage. There are guide groove layer, heat affected layer, stress cleavage layer, gallium nitride layer. Controllable laser thermal cleavage is a very promising technology, which is worth further research.