The progress of SEB and SEGR irradiation hardening technology for power MOSFET

Zhaohuan Tang; Xingji Li; Kaizhou Tan; Chaoming Liu; Xian Chen; Xinghua Fu

doi:10.1109/ICREED.2018.8905059

The progress of SEB and SEGR irradiation hardening technology for power MOSFET

Zhaohuan Tang
, Xingji Li
, Kaizhou Tan
, Chaoming Liu
, Xian Chen
, Xinghua Fu

Guizhou University
Harbin Institute of Technology
Science and Technology on Analog Integrated Circuit Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.

Original language	English
Title of host publication	2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538641354
DOIs	https://doi.org/10.1109/ICREED.2018.8905059
State	Published - May 2018
Externally published	Yes
Event	2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018 - Beijing, China Duration: 16 May 2018 → 18 May 2018

Publication series

Name	2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018

Conference

Conference	2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018
Country/Territory	China
City	Beijing
Period	16/05/18 → 18/05/18

Keywords

Power MOSFET
Recombination technology
Single event burnout
Single event gate rupture

Access to Document

10.1109/ICREED.2018.8905059

Cite this

Tang, Z., Li, X., Tan, K., Liu, C., Chen, X., & Fu, X. (2018). The progress of SEB and SEGR irradiation hardening technology for power MOSFET. In 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018 Article 8905059 (2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICREED.2018.8905059

Tang, Zhaohuan ; Li, Xingji ; Tan, Kaizhou et al. / The progress of SEB and SEGR irradiation hardening technology for power MOSFET. 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018).

@inproceedings{5704b0effd7048c487373704b515ff49,

title = "The progress of SEB and SEGR irradiation hardening technology for power MOSFET",

abstract = "This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.",

keywords = "Power MOSFET, Recombination technology, Single event burnout, Single event gate rupture",

author = "Zhaohuan Tang and Xingji Li and Kaizhou Tan and Chaoming Liu and Xian Chen and Xinghua Fu",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018 ; Conference date: 16-05-2018 Through 18-05-2018",

year = "2018",

month = may,

doi = "10.1109/ICREED.2018.8905059",

language = "英语",

series = "2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018",

address = "美国",

}

Tang, Z, Li, X, Tan, K, Liu, C, Chen, X & Fu, X 2018, The progress of SEB and SEGR irradiation hardening technology for power MOSFET. in 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018., 8905059, 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018, Institute of Electrical and Electronics Engineers Inc., 2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018, Beijing, China, 16/05/18. https://doi.org/10.1109/ICREED.2018.8905059

The progress of SEB and SEGR irradiation hardening technology for power MOSFET. / Tang, Zhaohuan; Li, Xingji; Tan, Kaizhou et al.
2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8905059 (2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The progress of SEB and SEGR irradiation hardening technology for power MOSFET

AU - Tang, Zhaohuan

AU - Li, Xingji

AU - Tan, Kaizhou

AU - Liu, Chaoming

AU - Chen, Xian

AU - Fu, Xinghua

PY - 2018/5

Y1 - 2018/5

N2 - This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.

AB - This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.

KW - Power MOSFET

KW - Recombination technology

KW - Single event burnout

KW - Single event gate rupture

UR - https://www.scopus.com/pages/publications/85076255262

U2 - 10.1109/ICREED.2018.8905059

DO - 10.1109/ICREED.2018.8905059

M3 - 会议稿件

AN - SCOPUS:85076255262

T3 - 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018

BT - 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd International Conference on Radiation Effects of Electronic Devices, ICREED 2018

Y2 - 16 May 2018 through 18 May 2018

ER -

Tang Z, Li X, Tan K, Liu C, Chen X, Fu X. The progress of SEB and SEGR irradiation hardening technology for power MOSFET. In 2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8905059. (2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018). doi: 10.1109/ICREED.2018.8905059

The progress of SEB and SEGR irradiation hardening technology for power MOSFET

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