TY - GEN
T1 - The microstructure of eutectic Au-Sn and In-Sn solders on Au/Ti and Au/Ni metallizations during laser solder bonding process for optical fiber alignment
AU - Yan, Bohan
AU - Wang, Chunqing
AU - Zhang, Wei
PY - 2006
Y1 - 2006
N2 - In this work, two eutectic solders: 80Au20Sn and 52In48Sn were chosen for fiber bonding through laser soldering, and Scanning Electronic Microscope (SEM) equipped with Energy Dispersive X-ray Detector (EDX) was used to investigate the microstructures of at four interfaces between two solders and two metallizations: Au-Sn/(Au/Ti), Au-Sn/(Au/Ni), In-Sn/ (Au/Ti), In-Sn/(Au/Ni). Results show that as for the Au-Sn solder joint a large amount of ζ-phase was formed at the Au-Sn/(Au/Ti) interface with its morphology closely related with laser input energy; while at the Au-Sn/(Au/Ni) interface scallop-like (Au,Ni)Sn appeared with a low input energy and irregular-shaped (Au,Ni) 3Sn2 emerged with a high input energy. As for the In-Sn solder, the IMCs at the In-Sn/ (Au/Ti) interface transformed from a Au(In,Sn)2 layer to isolated AuIn2 cubes with the increase of input energy while at the In-Sn/(Au/Ni) interface a thin layer of Au(In,Sn)2 was formed. As the connecting layer, Ti did not react in the soldering process.
AB - In this work, two eutectic solders: 80Au20Sn and 52In48Sn were chosen for fiber bonding through laser soldering, and Scanning Electronic Microscope (SEM) equipped with Energy Dispersive X-ray Detector (EDX) was used to investigate the microstructures of at four interfaces between two solders and two metallizations: Au-Sn/(Au/Ti), Au-Sn/(Au/Ni), In-Sn/ (Au/Ti), In-Sn/(Au/Ni). Results show that as for the Au-Sn solder joint a large amount of ζ-phase was formed at the Au-Sn/(Au/Ti) interface with its morphology closely related with laser input energy; while at the Au-Sn/(Au/Ni) interface scallop-like (Au,Ni)Sn appeared with a low input energy and irregular-shaped (Au,Ni) 3Sn2 emerged with a high input energy. As for the In-Sn solder, the IMCs at the In-Sn/ (Au/Ti) interface transformed from a Au(In,Sn)2 layer to isolated AuIn2 cubes with the increase of input energy while at the In-Sn/(Au/Ni) interface a thin layer of Au(In,Sn)2 was formed. As the connecting layer, Ti did not react in the soldering process.
UR - https://www.scopus.com/pages/publications/34250816364
M3 - 会议稿件
AN - SCOPUS:34250816364
SN - 1424404886
SN - 9781424404889
T3 - 2006 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, HDP'06
SP - 298
EP - 303
BT - 2006 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, HDP'06
T2 - 2006 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis, HDP'06
Y2 - 27 June 2006 through 28 June 2006
ER -