Abstract
AlN metallization substrates hold broad application potential in the field of electronic packaging due to their high thermal conductivity and unique electrical insulation properties. The present work reports a method for preparing Ag coatings by directly pressing and sintering micro-Ag particles on the AlN surface in air without additional brazing fillers or pre-treatment. The in-situ formation of the Ag-containing Al2O3 interlayer (∼200 nm) is critical for the interfacial bonding at the AlN/Ag interface. The diffusion of Ag particles into Al2O3 not only enhances the interfacial adhesion of the Ag layer but also improves thermal conductivity. Notably, AlN/Ag exhibits a high bonding strength of 67.6 MPa with an excellent thermal conductivity of 178.7 W·m−1·K−1 at 950°C. The Ag layer demonstrates superior surface hardness and electrical conductivity at 900°C due to its high density and low grain boundary density.
| Original language | English |
|---|---|
| Article number | 117542 |
| Journal | Journal of the European Ceramic Society |
| Volume | 45 |
| Issue number | 14 |
| DOIs | |
| State | Published - Nov 2025 |
Keywords
- AlN metallization
- AlO interlayer
- Bonding mechanism
- Micro-Ag particles
- Thermal conductivity
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