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The metallization of AlN ceramics fabricated via direct hot-pressing micro-Ag particles in air

  • Harbin University of Science and Technology
  • Harbin Institute of Technology
  • Weichai Holding Group Co., Ltd.

Research output: Contribution to journalArticlepeer-review

Abstract

AlN metallization substrates hold broad application potential in the field of electronic packaging due to their high thermal conductivity and unique electrical insulation properties. The present work reports a method for preparing Ag coatings by directly pressing and sintering micro-Ag particles on the AlN surface in air without additional brazing fillers or pre-treatment. The in-situ formation of the Ag-containing Al2O3 interlayer (∼200 nm) is critical for the interfacial bonding at the AlN/Ag interface. The diffusion of Ag particles into Al2O3 not only enhances the interfacial adhesion of the Ag layer but also improves thermal conductivity. Notably, AlN/Ag exhibits a high bonding strength of 67.6 MPa with an excellent thermal conductivity of 178.7 W·m−1·K−1 at 950°C. The Ag layer demonstrates superior surface hardness and electrical conductivity at 900°C due to its high density and low grain boundary density.

Original languageEnglish
Article number117542
JournalJournal of the European Ceramic Society
Volume45
Issue number14
DOIs
StatePublished - Nov 2025

Keywords

  • AlN metallization
  • AlO interlayer
  • Bonding mechanism
  • Micro-Ag particles
  • Thermal conductivity

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