The influence of the input capacitor on the ESD behavior

Shouming Wei; Qinsong Qian; Weifeng Sun; Jing Zhu; Siyang Liu

doi:10.1109/EDSSC.2011.6117689

The influence of the input capacitor on the ESD behavior

Shouming Wei^*
, Qinsong Qian
, Weifeng Sun
, Jing Zhu
, Siyang Liu

^*Corresponding author for this work

Southeast University, Nanjing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is also proposed to improve the ESD protection behavior of the CMOS integrated circuits with the input capacitor. The proposed design is validated by using two-dimensional simulations and experimental analysis.

Original language	English
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117689
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: 17 Nov 2011 → 18 Nov 2011

Publication series

Name	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	17/11/11 → 18/11/11

Keywords

Electro-static discharge
improved structure
input capacitor

Access to Document

10.1109/EDSSC.2011.6117689

Cite this

@inproceedings{11c7978174a9481792fd8cb440709d52,

title = "The influence of the input capacitor on the ESD behavior",

abstract = "The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is also proposed to improve the ESD protection behavior of the CMOS integrated circuits with the input capacitor. The proposed design is validated by using two-dimensional simulations and experimental analysis.",

keywords = "Electro-static discharge, improved structure, input capacitor",

author = "Shouming Wei and Qinsong Qian and Weifeng Sun and Jing Zhu and Siyang Liu",

year = "2011",

doi = "10.1109/EDSSC.2011.6117689",

language = "英语",

isbn = "9781457719974",

series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Wei, S, Qian, Q, Sun, W, Zhu, J & Liu, S 2011, The influence of the input capacitor on the ESD behavior. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117689, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 17/11/11. https://doi.org/10.1109/EDSSC.2011.6117689

The influence of the input capacitor on the ESD behavior. / Wei, Shouming; Qian, Qinsong; Sun, Weifeng et al.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117689 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The influence of the input capacitor on the ESD behavior

AU - Wei, Shouming

AU - Qian, Qinsong

AU - Sun, Weifeng

AU - Zhu, Jing

AU - Liu, Siyang

PY - 2011

Y1 - 2011

N2 - The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is also proposed to improve the ESD protection behavior of the CMOS integrated circuits with the input capacitor. The proposed design is validated by using two-dimensional simulations and experimental analysis.

AB - The Electrostatic discharge (ESD) capabilities of the gate-ground NMOS devices in the circuits with and without input capacitance are experimentally compared in this paper. The experimental results show that the input capacitor can reduce the ESD robustness, which has been explained in detail by using two-dimensional simulator. At last, a novel design is also proposed to improve the ESD protection behavior of the CMOS integrated circuits with the input capacitor. The proposed design is validated by using two-dimensional simulations and experimental analysis.

KW - Electro-static discharge

KW - improved structure

KW - input capacitor

UR - https://www.scopus.com/pages/publications/84862946390

U2 - 10.1109/EDSSC.2011.6117689

DO - 10.1109/EDSSC.2011.6117689

M3 - 会议稿件

AN - SCOPUS:84862946390

SN - 9781457719974

T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Y2 - 17 November 2011 through 18 November 2011

ER -

The influence of the input capacitor on the ESD behavior

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Keywords

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