The influence of sputtering power on the structural, morphological and optical properties of β-Ga2O3 thin films

Shaofang Li; Shujie Jiao; Dongbo Wang; Shiyong Gao; Jinzhong Wang

doi:10.1016/j.jallcom.2018.04.196

The influence of sputtering power on the structural, morphological and optical properties of β-Ga₂O₃ thin films

Shaofang Li
, Shujie Jiao^*
, Dongbo Wang
, Shiyong Gao
, Jinzhong Wang

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

In this work, Ga₂O₃ thin films were grown on Al₂O₃ (0001) substrate by radio frequency magnetron sputtering. The influence of sputtering power on crystalline structure, morphology, transmittance, band gap, and photoluminescence were investigated in detail. X-ray diffraction results showed that the β-Ga₂O₃ films were oriented along (2¯01) plane, and the crystalline quality improved with increasing sputtering power. Scanning electron microscope images revealed that the proportion of large-size grain increased with increasing sputtering power. The β-Ga₂O₃ films displayed very high transmittance close to 100% in visible region. Photoluminescence spectra showed that all the films exhibited intense blue and green emission centered at approximately 430 nm and 550 nm originated from the donor-acceptor pair recombination.

Original language	English
Pages (from-to)	186-191
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	753
DOIs	https://doi.org/10.1016/j.jallcom.2018.04.196
State	Published - 15 Jul 2018
Externally published	Yes

Keywords

GaO thin film
Magnetron sputtering
Photoluminescence

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10.1016/j.jallcom.2018.04.196

Cite this

@article{82f0cff2a25841c78a9db39375bb4299,

title = "The influence of sputtering power on the structural, morphological and optical properties of β-Ga2O3 thin films",

abstract = "In this work, Ga2O3 thin films were grown on Al2O3 (0001) substrate by radio frequency magnetron sputtering. The influence of sputtering power on crystalline structure, morphology, transmittance, band gap, and photoluminescence were investigated in detail. X-ray diffraction results showed that the β-Ga2O3 films were oriented along (2¯01) plane, and the crystalline quality improved with increasing sputtering power. Scanning electron microscope images revealed that the proportion of large-size grain increased with increasing sputtering power. The β-Ga2O3 films displayed very high transmittance close to 100\% in visible region. Photoluminescence spectra showed that all the films exhibited intense blue and green emission centered at approximately 430 nm and 550 nm originated from the donor-acceptor pair recombination.",

keywords = "GaO thin film, Magnetron sputtering, Photoluminescence",

author = "Shaofang Li and Shujie Jiao and Dongbo Wang and Shiyong Gao and Jinzhong Wang",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = jul,

day = "15",

doi = "10.1016/j.jallcom.2018.04.196",

language = "英语",

volume = "753",

pages = "186--191",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - The influence of sputtering power on the structural, morphological and optical properties of β-Ga2O3 thin films

AU - Li, Shaofang

AU - Jiao, Shujie

AU - Wang, Dongbo

AU - Gao, Shiyong

AU - Wang, Jinzhong

PY - 2018/7/15

Y1 - 2018/7/15

N2 - In this work, Ga2O3 thin films were grown on Al2O3 (0001) substrate by radio frequency magnetron sputtering. The influence of sputtering power on crystalline structure, morphology, transmittance, band gap, and photoluminescence were investigated in detail. X-ray diffraction results showed that the β-Ga2O3 films were oriented along (2¯01) plane, and the crystalline quality improved with increasing sputtering power. Scanning electron microscope images revealed that the proportion of large-size grain increased with increasing sputtering power. The β-Ga2O3 films displayed very high transmittance close to 100% in visible region. Photoluminescence spectra showed that all the films exhibited intense blue and green emission centered at approximately 430 nm and 550 nm originated from the donor-acceptor pair recombination.

AB - In this work, Ga2O3 thin films were grown on Al2O3 (0001) substrate by radio frequency magnetron sputtering. The influence of sputtering power on crystalline structure, morphology, transmittance, band gap, and photoluminescence were investigated in detail. X-ray diffraction results showed that the β-Ga2O3 films were oriented along (2¯01) plane, and the crystalline quality improved with increasing sputtering power. Scanning electron microscope images revealed that the proportion of large-size grain increased with increasing sputtering power. The β-Ga2O3 films displayed very high transmittance close to 100% in visible region. Photoluminescence spectra showed that all the films exhibited intense blue and green emission centered at approximately 430 nm and 550 nm originated from the donor-acceptor pair recombination.

KW - GaO thin film

KW - Magnetron sputtering

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/85046009966

U2 - 10.1016/j.jallcom.2018.04.196

DO - 10.1016/j.jallcom.2018.04.196

M3 - 文章

AN - SCOPUS:85046009966

SN - 0925-8388

VL - 753

SP - 186

EP - 191

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

The influence of sputtering power on the structural, morphological and optical properties of β-Ga₂O₃ thin films

Abstract

Keywords

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