The effect of trimethylaluminum flow rate on the structure and optical properties of AlInGaN quaternary epilayers

Dongbo Wang; Gang Liu; Shujie Jiao; Lingping Kong; Teren Liu; Tong Liu; Jinzhong Wang; Fengyun Guo; Chunyang Luan; Zhenghao Li

doi:10.3390/cryst7030069

The effect of trimethylaluminum flow rate on the structure and optical properties of AlInGaN quaternary epilayers

Dongbo Wang
, Gang Liu^*
, Shujie Jiao
, Lingping Kong
, Teren Liu
, Tong Liu
, Jinzhong Wang
, Fengyun Guo
, Chunyang Luan
, Zhenghao Li

^*Corresponding author for this work

Harbin Institute of Technology
Center for High Pressure Science & Technology Advanced Research
CAS - Suzhou Institute of Nano-Tech and Nano-Bionics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this work, a series of quaternary Al_xIn_yGa_1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of Al_xIn_yGa_1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in Al_xIn_yGa_1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.

Original language	English
Article number	69
Journal	Crystals
Volume	7
Issue number	3
DOIs	https://doi.org/10.3390/cryst7030069
State	Published - Mar 2017
Externally published	Yes

Keywords

AlInGaN alloys
Photoluminescence
Trimethylaluminum flows

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10.3390/cryst7030069

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title = "The effect of trimethylaluminum flow rate on the structure and optical properties of AlInGaN quaternary epilayers",

abstract = "In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.",

keywords = "AlInGaN alloys, Photoluminescence, Trimethylaluminum flows",

author = "Dongbo Wang and Gang Liu and Shujie Jiao and Lingping Kong and Teren Liu and Tong Liu and Jinzhong Wang and Fengyun Guo and Chunyang Luan and Zhenghao Li",

note = "Publisher Copyright: {\textcopyright} 2017 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2017",

month = mar,

doi = "10.3390/cryst7030069",

language = "英语",

volume = "7",

journal = "Crystals",

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number = "3",

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TY - JOUR

T1 - The effect of trimethylaluminum flow rate on the structure and optical properties of AlInGaN quaternary epilayers

AU - Wang, Dongbo

AU - Liu, Gang

AU - Jiao, Shujie

AU - Kong, Lingping

AU - Liu, Teren

AU - Liu, Tong

AU - Wang, Jinzhong

AU - Guo, Fengyun

AU - Luan, Chunyang

AU - Li, Zhenghao

PY - 2017/3

Y1 - 2017/3

N2 - In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.

AB - In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications.

KW - AlInGaN alloys

KW - Photoluminescence

KW - Trimethylaluminum flows

UR - https://www.scopus.com/pages/publications/85014893059

U2 - 10.3390/cryst7030069

DO - 10.3390/cryst7030069

M3 - 文章

AN - SCOPUS:85014893059

SN - 2073-4352

VL - 7

JO - Crystals

JF - Crystals

IS - 3

M1 - 69

ER -

The effect of trimethylaluminum flow rate on the structure and optical properties of AlInGaN quaternary epilayers

Abstract

Keywords

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