Abstract
In this study, YIG ferrite doped with Al3+ ion, represented as Y2BiFe5-xAlxO12 (x = 0.00 to 0.10, in increments of 0.02), was synthesized using the conventional solid-state method. Samples with varying Al3+ ion concentrations were sintered within the same temperature range. The microstructure, dielectric properties and microwave gyromagnetic properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), an impedance analyzer, a vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR) linewidth. The results indicated that the Al3+ ion substitute into the lattice without altering the material's phase formation. At the same time, the addition of Al3+ ion improved the density of the material, and maintained the appropriate magnetization and ferromagnetic resonance linewidth under the premise of high dielectric constant. The results shown that at a doping concentration of x = 0.06, the samples exhibit the narrowest FMR line-width (ΔH=336.1Oe) and excellent magnetic dielectric properties (4πMs=1291.489G,ε′=18.25@100MHz). The materials developed in this study hold promise for improving the performance of microwave devices and offer potential for reducing the size of microwave devices.
| Original language | English |
|---|---|
| Pages (from-to) | 6272-6280 |
| Number of pages | 9 |
| Journal | Ceramics International |
| Volume | 51 |
| Issue number | 5 |
| DOIs | |
| State | Published - Feb 2025 |
| Externally published | Yes |
Keywords
- Al ion substitution
- Dielectric properties
- FMR line-width
- Microstructure
- YIG ferrites
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