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The calculation of doped vanadium dioxide thin films

  • Heilongjiang University of Science and Technology
  • Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The vanadium oxide thin films are prepared on zinc selenide by DC magnet sputtering method. The components are gotten using The X-ray photoelectron spectroscopy (XPS). It's phase transition temperature can be changed by doping. Utilizing the Castep program package of the Material Studio simulation tool, based on local density function approximation and pseudopotential method, optimization for the geometric structure of vanadium dioxides is accomplished with the BFGS calculate way. The phase transition temperature of the vanadium oxide thin films doped with Cr and Al is higher; and doped with W and F is lower.

Original languageEnglish
Title of host publication2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013
Pages242-244
Number of pages3
DOIs
StatePublished - 2013
Event2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013 - Harbin, China
Duration: 7 Sep 20139 Sep 2013

Publication series

Name2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013

Conference

Conference2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013
Country/TerritoryChina
CityHarbin
Period7/09/139/09/13

Keywords

  • doping
  • phase transition
  • vanadium dioxide

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