Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking

D. F. Lim; J. Wei; K. C. Leong; C. S. Tan

doi:10.1109/IITC.2011.5940337

Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking

D. F. Lim^*
, J. Wei
, K. C. Leong
, C. S. Tan

^*Corresponding author for this work

Nanyang Technological University
Agency for Science, Technology and Research, Singapore
Global Foundries, Inc.
UMI 3288

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

Self-assembled monolayer (SAM) of alkane-thiol is applied to provide temporary passivation on Cu surface for protection against oxidation. The thermal stability of SAM is improved by storage at low temperature and in inert ambient. Surface analysis shows that SAM is effective in retarding surface oxidation and the degree of protection is higher for SAM with longer chain length. Wafer-to-wafer bonding result shows shear strength enhancement in the Cu-Cu bond when the appropriate chain length is used. Longer chain is less susceptible to thermal desorption hence no improvement in the bond strength is obtained.

Original language	English
Title of host publication	2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
DOIs	https://doi.org/10.1109/IITC.2011.5940337
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 - Dresden, Germany Duration: 8 May 2011 → 12 May 2011

Publication series

Name	2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Conference

Conference	2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
Country/Territory	Germany
City	Dresden
Period	8/05/11 → 12/05/11

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10.1109/IITC.2011.5940337

Cite this

Lim, D. F., Wei, J., Leong, K. C., & Tan, C. S. (2011). Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking. In 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 Article 5940337 (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011). https://doi.org/10.1109/IITC.2011.5940337

Lim, D. F. ; Wei, J. ; Leong, K. C. et al. / Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking. 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011).

@inproceedings{a1d74cd160b94f8db1bde9c20074a11b,

title = "Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking",

abstract = "Self-assembled monolayer (SAM) of alkane-thiol is applied to provide temporary passivation on Cu surface for protection against oxidation. The thermal stability of SAM is improved by storage at low temperature and in inert ambient. Surface analysis shows that SAM is effective in retarding surface oxidation and the degree of protection is higher for SAM with longer chain length. Wafer-to-wafer bonding result shows shear strength enhancement in the Cu-Cu bond when the appropriate chain length is used. Longer chain is less susceptible to thermal desorption hence no improvement in the bond strength is obtained.",

author = "Lim, \{D. F.\} and J. Wei and Leong, \{K. C.\} and Tan, \{C. S.\}",

year = "2011",

doi = "10.1109/IITC.2011.5940337",

language = "英语",

isbn = "9781457705038",

series = "2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011",

booktitle = "2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011",

note = "2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 ; Conference date: 08-05-2011 Through 12-05-2011",

}

Lim, DF, Wei, J, Leong, KC & Tan, CS 2011, Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking. in 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011., 5940337, 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011, Dresden, Germany, 8/05/11. https://doi.org/10.1109/IITC.2011.5940337

Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking. / Lim, D. F.; Wei, J.; Leong, K. C. et al.
2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. 5940337 (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking

AU - Lim, D. F.

AU - Wei, J.

AU - Leong, K. C.

AU - Tan, C. S.

PY - 2011

Y1 - 2011

N2 - Self-assembled monolayer (SAM) of alkane-thiol is applied to provide temporary passivation on Cu surface for protection against oxidation. The thermal stability of SAM is improved by storage at low temperature and in inert ambient. Surface analysis shows that SAM is effective in retarding surface oxidation and the degree of protection is higher for SAM with longer chain length. Wafer-to-wafer bonding result shows shear strength enhancement in the Cu-Cu bond when the appropriate chain length is used. Longer chain is less susceptible to thermal desorption hence no improvement in the bond strength is obtained.

AB - Self-assembled monolayer (SAM) of alkane-thiol is applied to provide temporary passivation on Cu surface for protection against oxidation. The thermal stability of SAM is improved by storage at low temperature and in inert ambient. Surface analysis shows that SAM is effective in retarding surface oxidation and the degree of protection is higher for SAM with longer chain length. Wafer-to-wafer bonding result shows shear strength enhancement in the Cu-Cu bond when the appropriate chain length is used. Longer chain is less susceptible to thermal desorption hence no improvement in the bond strength is obtained.

UR - https://www.scopus.com/pages/publications/80052062328

U2 - 10.1109/IITC.2011.5940337

DO - 10.1109/IITC.2011.5940337

M3 - 会议稿件

AN - SCOPUS:80052062328

SN - 9781457705038

T3 - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

BT - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

T2 - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Y2 - 8 May 2011 through 12 May 2011

ER -

Lim DF, Wei J, Leong KC, Tan CS. Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking. In 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011. 2011. 5940337. (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011). doi: 10.1109/IITC.2011.5940337

Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking

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