TY - GEN
T1 - Synthetic Solution of IPD Design, Packaging Method, and Reliability Test Based on GaAs-Based Fabrication Technology
AU - Qiang, Tian
AU - Wang, Cong
AU - Adhikari, Kishor Kumar
AU - Yu, He
AU - Kumar, Alok
AU - Xie, Bing Fang
AU - Meng, Fan Yi
AU - Wu, Qun
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/12/5
Y1 - 2018/12/5
N2 - Synthetic solution of integrated passive device (IPD) design, packaging method, and reliability test is presented in this study on the basis of the GaAs-based fabrication technology. Starting from the beginning of the modeling/design of equivalent circuits, until the mask array/fabrication and even final packaging/measurement, the whole process have been discussed thoroughly. Primary components, such as resistors, inductors, and capacitors, are designed and optimized with appropriate values and high Q-factor, and they are subsequently used to achieve the IPDs with compact size and excellent RF performance. SOT-6 packaging method protects the fabricated chip from physical damage and reliability test proves such an IPD synthetic solution can be a potential candidate for a commercial applicability.
AB - Synthetic solution of integrated passive device (IPD) design, packaging method, and reliability test is presented in this study on the basis of the GaAs-based fabrication technology. Starting from the beginning of the modeling/design of equivalent circuits, until the mask array/fabrication and even final packaging/measurement, the whole process have been discussed thoroughly. Primary components, such as resistors, inductors, and capacitors, are designed and optimized with appropriate values and high Q-factor, and they are subsequently used to achieve the IPDs with compact size and excellent RF performance. SOT-6 packaging method protects the fabricated chip from physical damage and reliability test proves such an IPD synthetic solution can be a potential candidate for a commercial applicability.
UR - https://www.scopus.com/pages/publications/85060201594
U2 - 10.1109/ICMMT.2018.8564007
DO - 10.1109/ICMMT.2018.8564007
M3 - 会议稿件
AN - SCOPUS:85060201594
T3 - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
BT - 2018 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2018
Y2 - 6 May 2018 through 9 May 2018
ER -