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Synthesis of Two-Dimensional Hexagonal Boron Nitride and Mid-Infrared Nanophotonics

  • Ningqiang Shi
  • , Ling Li*
  • , Peng Gao
  • , Xiangqian Jiang
  • , Jiandong Hao
  • , Chuncheng Ban
  • , Ruigeng Zhang
  • , Zhenxing Liu
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Ministry of Education of the People's Republic of China
  • Tianjin Institute of Power Sources

Research output: Contribution to journalReview articlepeer-review

Abstract

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered materials with unique structure and properties, is one of the most promising inorganic nanomaterials in recent years. The excellent properties of h-BN in the mid-infrared (MIR) region (∼2-20 μm) have also received much attention. At the same time, with the advancement of materials exploration and device-on-chip integrated systems, the synthesis of high-quality h-BN has encountered great challenges, which is a prerequisite for the application of h-BN in the MIR region. In this paper, we first review the recent advances in 2D h-BN synthesis by highlighting the research, advantages and disadvantages of various synthesis methods, and the critical issues encountered so far. Then, advances in the study and application of h-BN in the MIR region are explored, including perfect absorption, photodetectors, electro-optical modulators, phonon polaritons, and plasma excitons. Finally, we present our views on the challenges encountered in the synthesis and application of 2D h-BN in the MIR region in the near future in the context of the article's discussion and the potential of h-BN development, with the hope this review will be of some help to relevant researchers.

Original languageEnglish
Pages (from-to)34-65
Number of pages32
JournalACS Applied Electronic Materials
Volume5
Issue number1
DOIs
StatePublished - 24 Jan 2023

Keywords

  • 2D hexagonal boron nitride
  • mid-infrared
  • photoelectric device
  • polaritons
  • synthesis

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