Synthesis of thick and high quality cubic boron nitride films by r.f. bias assisted d.c. jet plasma chemical vapor deposition

High quality cubic boron nitride films were deposited at temperature as low as 870 °C by r.f. bias assisted plasma jet chemical vapor deposition. The decrease of growth temperature is achieved by the application of r.f. bias instead of d.c. bias. Raman peaks were observed for the samples deposited at 1120 to 870 °C. The growth rate is approximately 0.3 μm/min and change not much with changing growth temperature. At 1120 °C nearly phase pure cubic boron nitride phase was obtained.