Synthesis of semiconductor nanostructures in an argon arc

B. A. Timerkaev; A. A. Kaleeva; O. A. Petrova; R. M. Suleymanov; A. R. Sorokina; I. S. Ibragimov; A. I. Saifutdinov

doi:10.1088/1742-6596/1870/1/012013

Synthesis of semiconductor nanostructures in an argon arc

B. A. Timerkaev^*
, A. A. Kaleeva
, O. A. Petrova
, R. M. Suleymanov
, A. R. Sorokina
, I. S. Ibragimov
, A. I. Saifutdinov

^*Corresponding author for this work

Kazan National Research Technical University named after A.N. Tupolev

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, the synthesis of semiconductor spherical nanostructures is carried out by the plasma-chemical method. The sizes of the obtained nanospheres range from 100 nm to 1 mm. These structures are open on one side, have thin walls with a thickness of several nanometers, which end with "tentacles"with a diameter of several nanometers. Since the synthesis involved three elements of the fourth group of the periodic table (germanium, silicon, carbon), it has not yet been possible to determine the crystal structure of the obtained samples. All three elements are present on the surface of the sample in atomic percentages Ge-2.5%, Si-8%, C-55%. In addition to these elements, oxygen is also present in the spectrum.

Original language	English
Article number	012013
Journal	Journal of Physics: Conference Series
Volume	1870
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1870/1/012013
State	Published - 19 Apr 2021
Externally published	Yes
Event	1st All-Russian Conference with International Participation on Gas Discharge Plasma and Synthesis of Nanostructures, GDP_NANO 2020 - Kazan, Russian Federation Duration: 2 Dec 2020 → 5 Dec 2020

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title = "Synthesis of semiconductor nanostructures in an argon arc",

abstract = "In this paper, the synthesis of semiconductor spherical nanostructures is carried out by the plasma-chemical method. The sizes of the obtained nanospheres range from 100 nm to 1 mm. These structures are open on one side, have thin walls with a thickness of several nanometers, which end with {"}tentacles{"}with a diameter of several nanometers. Since the synthesis involved three elements of the fourth group of the periodic table (germanium, silicon, carbon), it has not yet been possible to determine the crystal structure of the obtained samples. All three elements are present on the surface of the sample in atomic percentages Ge-2.5\%, Si-8\%, C-55\%. In addition to these elements, oxygen is also present in the spectrum.",

author = "Timerkaev, \{B. A.\} and Kaleeva, \{A. A.\} and Petrova, \{O. A.\} and Suleymanov, \{R. M.\} and Sorokina, \{A. R.\} and Ibragimov, \{I. S.\} and Saifutdinov, \{A. I.\}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 1st All-Russian Conference with International Participation on Gas Discharge Plasma and Synthesis of Nanostructures, GDP\_NANO 2020 ; Conference date: 02-12-2020 Through 05-12-2020",

year = "2021",

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doi = "10.1088/1742-6596/1870/1/012013",

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AU - Timerkaev, B. A.

AU - Kaleeva, A. A.

AU - Petrova, O. A.

AU - Suleymanov, R. M.

AU - Sorokina, A. R.

AU - Ibragimov, I. S.

AU - Saifutdinov, A. I.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2021/4/19

Y1 - 2021/4/19

N2 - In this paper, the synthesis of semiconductor spherical nanostructures is carried out by the plasma-chemical method. The sizes of the obtained nanospheres range from 100 nm to 1 mm. These structures are open on one side, have thin walls with a thickness of several nanometers, which end with "tentacles"with a diameter of several nanometers. Since the synthesis involved three elements of the fourth group of the periodic table (germanium, silicon, carbon), it has not yet been possible to determine the crystal structure of the obtained samples. All three elements are present on the surface of the sample in atomic percentages Ge-2.5%, Si-8%, C-55%. In addition to these elements, oxygen is also present in the spectrum.

AB - In this paper, the synthesis of semiconductor spherical nanostructures is carried out by the plasma-chemical method. The sizes of the obtained nanospheres range from 100 nm to 1 mm. These structures are open on one side, have thin walls with a thickness of several nanometers, which end with "tentacles"with a diameter of several nanometers. Since the synthesis involved three elements of the fourth group of the periodic table (germanium, silicon, carbon), it has not yet been possible to determine the crystal structure of the obtained samples. All three elements are present on the surface of the sample in atomic percentages Ge-2.5%, Si-8%, C-55%. In addition to these elements, oxygen is also present in the spectrum.

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U2 - 10.1088/1742-6596/1870/1/012013

DO - 10.1088/1742-6596/1870/1/012013

M3 - 会议文章

AN - SCOPUS:85104877502

SN - 1742-6588

VL - 1870

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012013

T2 - 1st All-Russian Conference with International Participation on Gas Discharge Plasma and Synthesis of Nanostructures, GDP_NANO 2020

Y2 - 2 December 2020 through 5 December 2020

ER -

Synthesis of semiconductor nanostructures in an argon arc

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