Synthesis of multiferroic Ba0.7Sr0.3TiO 3-based thin films for memory devices by chemical solution deposition

Bin Li; Chunqing Wang; Wei Liu; Ying Zhong; Zhixin Zhang

doi:10.1109/ICEPT-HDP.2012.6474557

Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition

Bin Li^*
, Chunqing Wang
, Wei Liu
, Ying Zhong
, Zhixin Zhang

^*Corresponding author for this work

School of Integrated Circuits

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The multiferroic magnetoelectric Ba_0.7Sr_0.3TiO ₃-based films were prepared by sol-gel method. After annealing at 700 °C, the barium strontium titanate films showed highly crystalline structure with no impurity phase. The Ba_0.7Sr_0.3TiO ₃/Ba_0.7Sr_0.3TiO₃-Ni0.8Zn0.2Fe2O4/ Ba_0.7Sr_0.3TiO₃ (BSTO/BSTO-NZFO/BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTO-NZFO. The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature, and the values of saturation magnetization and coercivity were 57.2 memu/cm³ and 7.156 Oe, respectively.

Original language	English
Title of host publication	ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging
Pages	12-14
Number of pages	3
DOIs	https://doi.org/10.1109/ICEPT-HDP.2012.6474557
State	Published - 2012
Event	2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2012 - Guilin, China Duration: 13 Aug 2012 → 16 Aug 2012

Publication series

Name	ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging

Conference

Conference	2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2012
Country/Territory	China
City	Guilin
Period	13/08/12 → 16/08/12

Access to Document

10.1109/ICEPT-HDP.2012.6474557

Cite this

Li, B., Wang, C., Liu, W., Zhong, Y., & Zhang, Z. (2012). Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition. In ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging (pp. 12-14). Article 6474557 (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging). https://doi.org/10.1109/ICEPT-HDP.2012.6474557

Li, Bin ; Wang, Chunqing ; Liu, Wei et al. / Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition. ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging. 2012. pp. 12-14 (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging).

@inproceedings{a2b24d1537144cde907dbc99c94a1e81,

title = "Synthesis of multiferroic Ba0.7Sr0.3TiO 3-based thin films for memory devices by chemical solution deposition",

abstract = "The multiferroic magnetoelectric Ba0.7Sr0.3TiO 3-based films were prepared by sol-gel method. After annealing at 700 °C, the barium strontium titanate films showed highly crystalline structure with no impurity phase. The Ba0.7Sr0.3TiO 3/Ba0.7Sr0.3TiO3-Ni0.8Zn0.2Fe2O4/ Ba0.7Sr0.3TiO3 (BSTO/BSTO-NZFO/BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTO-NZFO. The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature, and the values of saturation magnetization and coercivity were 57.2 memu/cm3 and 7.156 Oe, respectively.",

author = "Bin Li and Chunqing Wang and Wei Liu and Ying Zhong and Zhixin Zhang",

year = "2012",

doi = "10.1109/ICEPT-HDP.2012.6474557",

language = "英语",

isbn = "9781467316804",

series = "ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging",

pages = "12--14",

booktitle = "ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging",

note = "2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2012 ; Conference date: 13-08-2012 Through 16-08-2012",

}

Li, B, Wang, C, Liu, W, Zhong, Y & Zhang, Z 2012, Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition. in ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging., 6474557, ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, pp. 12-14, 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2012, Guilin, China, 13/08/12. https://doi.org/10.1109/ICEPT-HDP.2012.6474557

Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition. / Li, Bin; Wang, Chunqing; Liu, Wei et al.
ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging. 2012. p. 12-14 6474557 (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Li, Bin

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AU - Zhang, Zhixin

PY - 2012

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N2 - The multiferroic magnetoelectric Ba0.7Sr0.3TiO 3-based films were prepared by sol-gel method. After annealing at 700 °C, the barium strontium titanate films showed highly crystalline structure with no impurity phase. The Ba0.7Sr0.3TiO 3/Ba0.7Sr0.3TiO3-Ni0.8Zn0.2Fe2O4/ Ba0.7Sr0.3TiO3 (BSTO/BSTO-NZFO/BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTO-NZFO. The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature, and the values of saturation magnetization and coercivity were 57.2 memu/cm3 and 7.156 Oe, respectively.

AB - The multiferroic magnetoelectric Ba0.7Sr0.3TiO 3-based films were prepared by sol-gel method. After annealing at 700 °C, the barium strontium titanate films showed highly crystalline structure with no impurity phase. The Ba0.7Sr0.3TiO 3/Ba0.7Sr0.3TiO3-Ni0.8Zn0.2Fe2O4/ Ba0.7Sr0.3TiO3 (BSTO/BSTO-NZFO/BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTO-NZFO. The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature, and the values of saturation magnetization and coercivity were 57.2 memu/cm3 and 7.156 Oe, respectively.

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ER -

Li B, Wang C, Liu W, Zhong Y, Zhang Z. Synthesis of multiferroic Ba_0.7Sr_0.3TiO ₃-based thin films for memory devices by chemical solution deposition. In ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging. 2012. p. 12-14. 6474557. (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging). doi: 10.1109/ICEPT-HDP.2012.6474557